| No. |
Part Name |
Description |
Manufacturer |
| 91 |
1N5441B |
Silicon EPICAP Diode, voltage variable capacitance, 30V |
Motorola |
| 92 |
1N5441B |
Diode VAR Cap Single 30V 6.8pF 2-Pin DO-7 |
New Jersey Semiconductor |
| 93 |
1N5541B |
Leaded Zener Diode General Purpose |
Central Semiconductor |
| 94 |
1N5541B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 95 |
1N5541B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 22.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 96 |
1N5541B |
Low Voltage Avalanche Zener |
Microsemi |
| 97 |
1N5541B |
Low Voltage Avalanche Zener |
Microsemi |
| 98 |
1N5541B |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 22V ±5% tolerance |
Motorola |
| 99 |
1N5541B |
Diode Zener Single 22V 5% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 100 |
1N5541B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 101 |
1N5541B-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 102 |
1N5541B-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 103 |
1N5541BUR |
Zener Voltage Regulator Diode |
Microsemi |
| 104 |
1N5541BUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 105 |
1N5541BUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 106 |
1N5741B |
Voltage regulator diode |
mble |
| 107 |
1N5741B |
Zener Voltage Regulator Diode |
Microsemi |
| 108 |
1N5741B |
Diode Zener Single 16V 5% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 109 |
1N5741B |
16.0V Voltage Reference Diode |
Philips |
| 110 |
1N5941B |
Leaded Zener Diode General Purpose |
Central Semiconductor |
| 111 |
1N5941B |
1.5W SILICON ZENER DIODE |
Jinan Gude Electronic Device |
| 112 |
1N5941B |
Pd=1.5W, Vz=47V zener diode |
MCC |
| 113 |
1N5941B |
1.5 Watt Zener Diode 11 to 200 Volts |
Micro Commercial Components |
| 114 |
1N5941B |
SILICON 1.5 WATT ZENER DIODES |
Microsemi |
| 115 |
1N5941B |
1 to 3 watt zener regulator diode |
Motorola |
| 116 |
1N5941B |
Diode Zener Single 47V 5% 1.5W Automotive 2-Pin DO-41 |
New Jersey Semiconductor |
| 117 |
1N5941B |
Zener 47V 3.0W 5% |
ON Semiconductor |
| 118 |
1N5941B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 119 |
1N5941B |
47 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 120 |
1N5941B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
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