| No. |
Part Name |
Description |
Manufacturer |
| 91 |
MX2N4416A |
N-Channel |
Microsemi |
| 92 |
PMBF4416 |
N-channel field-effect transistor |
Philips |
| 93 |
PMBF4416A |
N-channel field-effect transistor |
Philips |
| 94 |
PN4416 |
N-Channel JFET High Frequency Amplifier |
Calogic |
| 95 |
PN4416 |
SFET RF /VHF / UHF / Amplitiers |
Fairchild Semiconductor |
| 96 |
PN4416 |
N-Channel JFET - RF, VHF, UHF amplifiers |
National Semiconductor |
| 97 |
PN4416 |
Trans JFET N-CH 30V Si 3-Pin TO-92 |
New Jersey Semiconductor |
| 98 |
PN4416 |
N-channel field-effect transistor |
Philips |
| 99 |
PN4416A |
N-channel field-effect transistor |
Philips |
| 100 |
PUB4416 |
Silicon NPN Epitaxial Planar Type |
Panasonic |
| 101 |
SI4416DY |
Single N-Channel MOSFET |
Fairchild Semiconductor |
| 102 |
SI4416DY |
N-channel enhancement mode field-effect transistor |
Philips |
| 103 |
SI4416DY |
N-Channel 30-V (D-S) MOSFET |
Vishay |
| 104 |
SI4416DYNCR-DS |
DS-Spice Model for Si4416DYncr |
Vishay |
| 105 |
SI4416DYNCR-DS |
DS-Spice Model for Si4416DYncr |
Vishay |
| 106 |
SMP4416 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
| 107 |
SMP4416A |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
| 108 |
SP4416 |
Electroluminescent Lamp Driver with 4-Level Light Intensity Selection Feature |
Sipex Corporation |
| 109 |
SP4416EU |
Electroluminescent Lamp Driver with 4-Level Light Intensity Selection Feature |
Sipex Corporation |
| 110 |
SP4416UEB |
Electroluminescent Lamp Driver with 4-Level Light Intensity Selection Feature |
Sipex Corporation |
| 111 |
SST4416 |
Wideband, High Gain, Single, N- Channel JFET(SMT) |
Linear Systems |
| 112 |
SST4416 |
Low Noise/High Frequency |
Vishay |
| 113 |
SST4416A |
Wideband, High Gain, Single, N- Channel JFET(SMT) |
Linear Systems |
| 114 |
TMS4416 |
16,384 WORD BY 4 BIT DYNAMIC RAM |
Texas Instruments |
| 115 |
TMS4416-12 |
120ns; V(except Vdd): -1.5 to +10.0V; 50mA; 1W; 16,384-word by 4-bit dynamic RAM |
Texas Instruments |
| 116 |
TMS4416-15 |
150ns; V(except Vdd): -1.5 to +10.0V; 50mA; 1W; 16,384-word by 4-bit dynamic RAM |
Texas Instruments |
| 117 |
TMS4416-20 |
200ns; V(except Vdd): -1.5 to +10.0V; 50mA; 1W; 16,384-word by 4-bit dynamic RAM |
Texas Instruments |
| 118 |
TNG4416 |
Single 4 wide (2+2+2+3) input expandable AND/OR invert gate |
Transitron Electronic |
| 119 |
TSM4416DCS |
Discrete Devices-MOSFET-Dual N-Channel |
Taiwan Semiconductor |
| 120 |
UPD4416001 |
16M-bit(16M-word x 1-bit) Fast SRAM |
NEC |
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