No. |
Part Name |
Description |
Manufacturer |
91 |
HY57V561620T-HP |
4Banks x 4M x 16Bit Synchronous DRAM |
Hynix Semiconductor |
92 |
HY57V561620T-P |
4Banks x 4M x 16Bit Synchronous DRAM |
Hynix Semiconductor |
93 |
HY57V561620T-S |
4Banks x 4M x 16Bit Synchronous DRAM |
Hynix Semiconductor |
94 |
HY57V658020TC-10 |
2Mbit x 4bank x 8 SDRAM, LVTTL, 100ns |
Hynix Semiconductor |
95 |
HY57V658020TC-12 |
2Mbit x 4bank x 8 SDRAM, LVTTL, 120ns |
Hynix Semiconductor |
96 |
HY57V658020TC-15 |
2Mbit x 4bank x 8 SDRAM, LVTTL, 150ns |
Hynix Semiconductor |
97 |
K1524BA |
5V Voltage Controlled Crystal Oscillators |
Champion Technologies Inc |
98 |
LM8364BALMF20 |
Micropower Undervoltage Sensing Circuits |
National Semiconductor |
99 |
LM8364BALMF20 |
Active Low Voltage Monitor with Low Quiescent Current and 2.5% Threshold Accuracy 5-SOT-23 -40 to 85 |
Texas Instruments |
100 |
LM8364BALMF20/NOPB |
Active Low Voltage Monitor with Low Quiescent Current and 2.5% Threshold Accuracy 5-SOT-23 -40 to 85 |
Texas Instruments |
101 |
LM8364BALMF30 |
Micropower Undervoltage Sensing Circuits |
National Semiconductor |
102 |
LM8364BALMF45 |
Micropower Undervoltage Sensing Circuits |
National Semiconductor |
103 |
LM8364BALMFX20 |
Micropower Undervoltage Sensing Circuits |
National Semiconductor |
104 |
LM8364BALMFX20/NOPB |
Active Low Voltage Monitor with Low Quiescent Current and 2.5% Threshold Accuracy 5-SOT-23 -40 to 85 |
Texas Instruments |
105 |
LM8364BALMFX30 |
Micropower Undervoltage Sensing Circuits |
National Semiconductor |
106 |
LM8364BALMFX45 |
Micropower Undervoltage Sensing Circuits |
National Semiconductor |
107 |
M366S0424DTS |
4M x 64 SDRAM DIMM based on 8M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect |
Samsung Electronic |
108 |
M366S0424DTS |
4M x 64 SDRAM DIMM based on 8M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect |
Samsung Electronic |
109 |
M366S0424ETS |
4Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet |
Samsung Electronic |
110 |
M366S0424FTS |
4Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet |
Samsung Electronic |
111 |
M366S0823DTS |
8M x 64 SDRAM DIMM based on 8M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect |
Samsung Electronic |
112 |
M366S0823DTS |
8M x 64 SDRAM DIMM based on 8M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet |
Samsung Electronic |
113 |
M366S0823DTS |
8M x 64 SDRAM DIMM based on 8M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet |
Samsung Electronic |
114 |
M366S0823DTS |
8M x 64 SDRAM DIMM based on 8M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect |
Samsung Electronic |
115 |
M366S0823DTS |
8M x 64 SDRAM DIMM based on 8M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet |
Samsung Electronic |
116 |
M366S0823DTS |
8M x 64 SDRAM DIMM based on 8M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect |
Samsung Electronic |
117 |
M366S0823ETS |
8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh,3.3V Synchronous DRAMs with SPD Data Sheet |
Samsung Electronic |
118 |
M366S0823FTS |
8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet |
Samsung Electronic |
119 |
M366S0824DT0 |
8M x 64 SDRAM DIMM based on 4M x 16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect |
Samsung Electronic |
120 |
M366S0824ET0 |
8Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data sheet |
Samsung Electronic |
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