| No. |
Part Name |
Description |
Manufacturer |
| 91 |
IS24C256-2P |
262,144-bit 2-WIRE SERIAL CMOS EEPROM |
Integrated Silicon Solution Inc |
| 92 |
IS24C256-2PI |
262,144-bit 2-WIRE SERIAL CMOS EEPROM |
Integrated Silicon Solution Inc |
| 93 |
IS24C256-2Z |
262,144-bit 2-WIRE SERIAL CMOS EEPROM |
Integrated Silicon Solution Inc |
| 94 |
IS24C256-2ZI |
262,144-bit 2-WIRE SERIAL CMOS EEPROM |
Integrated Silicon Solution Inc |
| 95 |
IS24C256-3G |
262,144-bit 2-WIRE SERIAL CMOS EEPROM |
Integrated Silicon Solution Inc |
| 96 |
IS24C256-3GI |
262,144-bit 2-WIRE SERIAL CMOS EEPROM |
Integrated Silicon Solution Inc |
| 97 |
IS24C256-3P |
262,144-bit 2-WIRE SERIAL CMOS EEPROM |
Integrated Silicon Solution Inc |
| 98 |
IS24C256-3PI |
262,144-bit 2-WIRE SERIAL CMOS EEPROM |
Integrated Silicon Solution Inc |
| 99 |
IS24C256-3Z |
262,144-bit 2-WIRE SERIAL CMOS EEPROM |
Integrated Silicon Solution Inc |
| 100 |
IS24C256-3ZI |
262,144-bit 2-WIRE SERIAL CMOS EEPROM |
Integrated Silicon Solution Inc |
| 101 |
KM44C256B-10 |
100ns; V(cc/in/out): -1.0 to 7.0V; 600mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 102 |
KM44C256B-7 |
70ns; V(cc/in/out): -1.0 to 7.0V; 600mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 103 |
KM44C256B-8 |
80ns; V(cc/in/out): -1.0 to 7.0V; 600mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 104 |
KM44C256C-6 |
60ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 105 |
KM44C256C-7 |
70ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 106 |
KM44C256C-8 |
80ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 107 |
KM44C256CL-6 |
60ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 108 |
KM44C256CL-7 |
70ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 109 |
KM44C256CL-8 |
80ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 110 |
KM44C256CSL-6 |
60ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 111 |
KM44C256CSL-7 |
70ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 112 |
KM44C256CSL-8 |
80ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 113 |
KM44C256D-6 |
60ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 114 |
KM44C256D-7 |
60ns; V(cc/in/out): -1.0 to 7.0V; 358mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 115 |
KM44C256D-8 |
60ns; V(cc/in/out): -1.0 to 7.0V; 330mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 116 |
MCM44C256B |
4MB R4000 Secondary Cache Fast Static RAM Module Set |
Motorola |
| 117 |
MCM44C256BSG12 |
4MB R4000 secondary cache fast static RAM module set |
Motorola |
| 118 |
MCM44C256BSG15 |
4MB R4000 secondary cache fast static RAM module set |
Motorola |
| 119 |
MCM44C256BSG17 |
4MB R4000 secondary cache fast static RAM module set |
Motorola |
| 120 |
SMJ44C256-10 |
262144 by 4-bit dynamic random-access memory |
Austin Semiconductor |
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