No. |
Part Name |
Description |
Manufacturer |
91 |
K4S161622H-TC80 |
16Mb H-die SDRAM Specification |
Samsung Electronic |
92 |
KM44S16030BT-G_F10 |
100MHz; -1.0 to 4.6V; 1W; 50mA; 4M x 4-bit x 4 banks synchronous CMOS SDRAM |
Samsung Electronic |
93 |
KM44S16030BT-G_F8 |
125MHz; -1.0 to 4.6V; 1W; 50mA; 4M x 4-bit x 4 banks synchronous CMOS SDRAM |
Samsung Electronic |
94 |
KM44S16030BT-G_FH |
100MHz; -1.0 to 4.6V; 1W; 50mA; 4M x 4-bit x 4 banks synchronous CMOS SDRAM |
Samsung Electronic |
95 |
KM44S16030BT-G_FL |
100MHz; -1.0 to 4.6V; 1W; 50mA; 4M x 4-bit x 4 banks synchronous CMOS SDRAM |
Samsung Electronic |
96 |
KM44S16030CT-G_F10 |
100MHz; -1.0 to 4.6V; 1W; 50mA; 4M x 4-bit x 4 banks synchronous CMOS SDRAM |
Samsung Electronic |
97 |
KM44S16030CT-G_F7 |
143MHz; -1.0 to 4.6V; 1W; 50mA; 4M x 4-bit x 4 banks synchronous CMOS SDRAM |
Samsung Electronic |
98 |
KM44S16030CT-G_F8 |
125MHz; -1.0 to 4.6V; 1W; 50mA; 4M x 4-bit x 4 banks synchronous CMOS SDRAM |
Samsung Electronic |
99 |
KM44S16030CT-G_FH |
100MHz; -1.0 to 4.6V; 1W; 50mA; 4M x 4-bit x 4 banks synchronous CMOS SDRAM |
Samsung Electronic |
100 |
KM44S16030CT-G_FL |
100MHz; -1.0 to 4.6V; 1W; 50mA; 4M x 4-bit x 4 banks synchronous CMOS SDRAM |
Samsung Electronic |
101 |
M374S1623DT0 |
16M x 72 SDRAM DIMM with ECC based on 8M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data sheet |
Samsung Electronic |
102 |
M374S1623DT0 |
16M x 72 SDRAM DIMM with ECC based on 8M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect |
Samsung Electronic |
103 |
M374S1623DT0 |
16M x 72 SDRAM DIMM with ECC based on 8M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data sheet |
Samsung Electronic |
104 |
M374S1623DT0 |
16M x 72 SDRAM DIMM with ECC based on 8M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data sheet |
Samsung Electronic |
105 |
M374S1623DT0 |
16M x 72 SDRAM DIMM with ECC based on 8M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect |
Samsung Electronic |
106 |
M374S1623ET0 |
16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data sheet |
Samsung Electronic |
107 |
M374S1623ETS |
16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data sheet |
Samsung Electronic |
108 |
M374S1623FTS |
16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet |
Samsung Electronic |
109 |
M464S1654BT1 |
16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data sheet |
Samsung Electronic |
110 |
M464S1654BT1 |
16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data sheet |
Samsung Electronic |
111 |
M464S1654CTS |
16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet |
Samsung Electronic |
112 |
M464S1654DTS |
16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet |
Samsung Electronic |
113 |
M464S1654ETS |
SDRAM Unbuffered SODIMM |
Samsung Electronic |
114 |
M464S1654ETS-C7A |
SDRAM Unbuffered SODIMM |
Samsung Electronic |
115 |
OR2C04A-4S160 |
Field-Programmable Gate Arrays |
etc |
116 |
OR2C04A-4S160I |
Field-Programmable Gate Arrays |
etc |
117 |
OR2C06A-4S160 |
Field-Programmable Gate Arrays |
etc |
118 |
OR2C06A-4S160I |
Field-Programmable Gate Arrays |
etc |
119 |
OR2C08A-4S160 |
Field-Programmable Gate Arrays |
etc |
120 |
OR2C08A-4S160I |
Field-Programmable Gate Arrays |
etc |
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