No. |
Part Name |
Description |
Manufacturer |
91 |
AS4C1M16F5-60TI |
5V 1M X 16 CMOS DRAM |
Alliance Semiconductor |
92 |
AS4LC1M16E5-60JC |
3V 1M X 6 CMOS DRAM (EDO) |
Alliance Semiconductor |
93 |
AS4LC1M16E5-60JI |
3V 1M X 6 CMOS DRAM (EDO) |
Alliance Semiconductor |
94 |
AS4LC1M16E5-60TC |
3V 1M X 6 CMOS DRAM (EDO) |
Alliance Semiconductor |
95 |
AS4LC1M16E5-60TI |
3V 1M X 6 CMOS DRAM (EDO) |
Alliance Semiconductor |
96 |
AT-8111 |
0.5-6 GHz Low Noise Gallium Arsenide FET |
AVANTEK |
97 |
ATF-21100 |
0.5-6 GHz Low Noise Gallium Arsenide FET |
AVANTEK |
98 |
ATF-21170 |
0.5-6 GHz Low Noise Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
99 |
ATF-21170 |
0.5-6 GHz Low Noise Gallium Arsenide FET |
AVANTEK |
100 |
ATF-21170-STR |
0.5-6GHz low noise gallium arsenide FET |
Agilent (Hewlett-Packard) |
101 |
ATF-21186 |
0.5-6 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
102 |
ATF-21186-STR |
0.5-6 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
103 |
ATF-21186-TR1 |
0.5-6 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
104 |
AZ695-6 |
Nominal coil VCD: 6; sensitive subminiature relay |
ZETTLER electronics |
105 |
AZ695-6G |
Nominal coil VCD: 6; sensitive subminiature relay |
ZETTLER electronics |
106 |
B25-600RB1P1F |
Single Phase Bridge |
Mullard |
107 |
B25-600RNB1P1F |
Three Phase Bridge |
Mullard |
108 |
B4150CK5-6.0 |
6.0V 150mA CMOS low dropout LDO |
BayLinear |
109 |
B4151CK5-6.0 |
6.0V 150mA CMOS low dropout LDO |
BayLinear |
110 |
B4251CK5-6.0 |
6.0V 250mA low dropout regulator |
BayLinear |
111 |
B4252CK5-6.0 |
6.0V 250mA low dropout voltage regulator |
BayLinear |
112 |
BD135-6 |
12.500W Switching NPN Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 40 - 100 hFE. Complementary BD136-6 |
Continental Device India Limited |
113 |
BD135-6 |
NPN High-speed, medium power, general purpose transistor, plastic case |
IPRS Baneasa |
114 |
BD135-6 |
TO-126 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
115 |
BD135-6 |
1.5A plastic 10W medium power silicon NPN transistor |
Motorola |
116 |
BD135-6 |
NPN Silicon Transistor for AF driver and power stages of medium output |
Siemens |
117 |
BD135-6 |
NPN SILICON TRANSISTORS |
Siemens |
118 |
BD136-6 |
12.500W Switching PNP Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 40 - 100 hFE. Complementary BD135-6 |
Continental Device India Limited |
119 |
BD175-6 |
30.000W Switching NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 40 - 100 hFE. |
Continental Device India Limited |
120 |
BD175-6 |
3A plastic 30W medium power silicon NPN transistor |
Motorola |
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