| No. |
Part Name |
Description |
Manufacturer |
| 91 |
30KW168 |
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 92 |
30KW168A |
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 93 |
30KW180 |
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 94 |
30KW180A |
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 95 |
30KW198 |
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 96 |
30KW198A |
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 97 |
30KW216 |
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 98 |
30KW216A |
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 99 |
30KW240 |
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 100 |
30KW240A |
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 101 |
30KW258 |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 102 |
30KW258A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 103 |
30KW270 |
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 104 |
30KW270A |
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 105 |
30KW288 |
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 106 |
30KW288A |
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 107 |
5KP |
5000W TRANSIENT VOLTAGE SUPPRESSORS |
Won-Top Electronics |
| 108 |
5KP10 |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:50-110V PEAK PULSE POWER: 5000W |
Shanghai Sunrise Electronics |
| 109 |
5KP10 |
5000W TRANSIENT VOLTAGE SUPPRESSORS |
Won-Top Electronics |
| 110 |
5KP100 |
Ppk=5000W, Vc=179V transient voltage suppressor |
MCC |
| 111 |
5KP100 |
100.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 112 |
5KP100 |
5000W TRANSIENT VOLTAGE SUPPRESSORS |
Won-Top Electronics |
| 113 |
5KP100(C)A |
100V; 5000W transient voltage suppressor |
Diodes |
| 114 |
5KP100A |
Ppk=5000W, Vc=162V transient voltage suppressor |
MCC |
| 115 |
5KP100A |
100.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 116 |
5KP100A |
5000W TRANSIENT VOLTAGE SUPPRESSORS |
Won-Top Electronics |
| 117 |
5KP100A-G |
Transient Voltage Suppressor (TVS) Axial Lead, PPPM=5000Watts, VRWM=100V, Tolerance=5% |
Comchip Technology |
| 118 |
5KP100A-HF |
Halogen Free Transient Voltage Suppressor (TVS) Axial Lead, PPPM=5000Watts, VRWM=100V, Tolerance=5% |
Comchip Technology |
| 119 |
5KP100C |
Ppk=5000W, Vc=179V transient voltage suppressor |
MCC |
| 120 |
5KP100C |
5000W TRANSIENT VOLTAGE SUPPRESSORS |
Won-Top Electronics |
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