| No. |
Part Name |
Description |
Manufacturer |
| 91 |
RSD150N06TL |
4V Drive Nch MOSFET |
ROHM |
| 92 |
RUQ050N02 |
1.2V Drive Nch MOSFET |
ROHM |
| 93 |
RUQ050N02FRA |
1.2V Drive Nch MOSFET (Corresponds to AEC-Q101) |
ROHM |
| 94 |
RUQ050N02FRATR |
1.2V Drive Nch MOSFET (Corresponds to AEC-Q101) |
ROHM |
| 95 |
RUQ050N02TR |
1.2V Drive Nch MOSFET |
ROHM |
| 96 |
SD150N04MBC |
Standard recovery diode |
International Rectifier |
| 97 |
SD150N04MC |
Standard recovery diode |
International Rectifier |
| 98 |
SD150N04MSC |
Standard recovery diode |
International Rectifier |
| 99 |
SD150N04PBC |
Standard recovery diode |
International Rectifier |
| 100 |
SD150N04PC |
Standard recovery diode |
International Rectifier |
| 101 |
SD150N04PSC |
Standard recovery diode |
International Rectifier |
| 102 |
SD150N04PV |
400V 150A Std. Recovery Diode in a DO-205AC (DO-30)package |
International Rectifier |
| 103 |
SD150N08MBC |
Standard recovery diode |
International Rectifier |
| 104 |
SD150N08MC |
Standard recovery diode |
International Rectifier |
| 105 |
SD150N08MSC |
Standard recovery diode |
International Rectifier |
| 106 |
SD150N08PBC |
Standard recovery diode |
International Rectifier |
| 107 |
SD150N08PC |
Standard recovery diode |
International Rectifier |
| 108 |
SD150N08PSC |
Standard recovery diode |
International Rectifier |
| 109 |
SD150N08PV |
800V 150A Std. Recovery Diode in a DO-205AC (DO-30)package |
International Rectifier |
| 110 |
SMP50N06-25 |
N-Channel Enhancement-Mode MOSFET |
Vishay |
| 111 |
SMP50N0X |
(SMP60N0x) N-Channel Enhancement-Mode Transistor |
Vishay |
| 112 |
SPD50N03S2-07 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, DPAK, RDSon = 7.3mOhm, 50A, NL |
Infineon |
| 113 |
SPD50N03S2L-06 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, DPAK, RDSon = 6.4mOhm, 50A, LL |
Infineon |
| 114 |
SPD50N06S2-14 |
Low Voltage MOSFETs - DPAK; 50 A; 55V; NL; 14.4 mOhm |
Infineon |
| 115 |
SPD50N06S2L-13 |
Low Voltage MOSFETs - DPAK; 50 A; 55V; LL; 12.7 mOhm |
Infineon |
| 116 |
STE250N06 |
Length/Height 12.2 mm Width 25.4 mm Depth 38 mm Power dissipation 450 W Transistor polarity N Channel Centres fixing 31.6 mm Current Id cont. 250 A Current Idm pulse 750 A Voltage isolation 2.5 kV |
SGS Thomson Microelectronics |
| 117 |
STE250N06 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE |
ST Microelectronics |
| 118 |
STP50N06 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 119 |
STP50N06 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 120 |
STP50N06FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
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