No. |
Part Name |
Description |
Manufacturer |
91 |
751-04 |
CASE DIMENSIONS |
Motorola |
92 |
BAP51-02 |
General purpose PIN diode |
Leshan Radio Company |
93 |
BAP51-02 |
Pin Diodes |
Micro Commercial Components |
94 |
BAP51-02 |
General purpose PIN diode |
NXP Semiconductors |
95 |
BAP51-02 |
General purpose PIN diode |
Philips |
96 |
BAP51-03 |
General purpose PIN diode |
NXP Semiconductors |
97 |
BAP51-03 |
General purpose PIN diode |
Philips |
98 |
BAP51-04W |
General purpose PIN diode |
NXP Semiconductors |
99 |
BAP51-04W |
General purpose PIN diode |
Philips |
100 |
BAP51-05W |
Silicon PIN diode |
NXP Semiconductors |
101 |
BAP51-05W |
General purpose PIN diode |
Philips |
102 |
BAP51-06W |
Silicon PIN diode |
NXP Semiconductors |
103 |
BBY51-02L |
Diodes for low voltage VCO applications |
Infineon |
104 |
BBY51-02W |
Varactordiodes - Silicon high Q hyperabrupt tuning diode |
Infineon |
105 |
BBY51-02W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Low series inductance) |
Siemens |
106 |
BBY51-03W |
Varactordiodes - Silicon high Q hyperabrupt tuning diode |
Infineon |
107 |
BBY51-03W |
Silicon High Q Hyperabrupt Tuning Diode |
Infineon |
108 |
BBY51-03W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
Siemens |
109 |
BBY51-07 |
Silicon High Q Hyperabrupt Dual Tunin... |
Infineon |
110 |
BBY51-07 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation |
Siemens |
111 |
CASE 751-03 |
Package Outline Dimensions |
Motorola |
112 |
CM1451-06 |
LCD & Camera EMI Filter Array with ESD Protection |
California Micro Devices Corp |
113 |
CM1451-06CP |
LCD & Camera EMI Filter Array with ESD Protection |
California Micro Devices Corp |
114 |
CM1451-06CS |
LCD & Camera EMI Filter Array with ESD Protection |
California Micro Devices Corp |
115 |
DME2851-000 |
Beam-Lead Bridge Quad, N-Type Low, Medium, High Drive Schottky Diodes, Frequency Band K, Ka |
Skyworks Solutions |
116 |
DS2751-025 |
Multichemistry Fuel Garge |
MAXIM - Dallas Semiconductor |
117 |
FS6251-01 |
Clock generator IC for Intel Pentium II 440BX PC100 system |
AMI Semiconductor |
118 |
G7751-01 |
Active area: 0.6mm; external input voltage:+-18V; infrared detector module with preamplifier: high sensitivity module of easy-to-use. For infrared detection |
Hamamatsu Corporation |
119 |
G7751-02 |
Infrared detector module with preamp |
Hamamatsu Corporation |
120 |
HDSP-3351-00000 |
Low Current Seven Segment Displays |
Agilent (Hewlett-Packard) |
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