No. |
Part Name |
Description |
Manufacturer |
91 |
IS41LV16256-60K |
256K x 16 (4-Mbit) DRAM with EDO page mode, 60ns |
ICSI |
92 |
IS41LV16256-60K |
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
Integrated Silicon Solution Inc |
93 |
IS41LV16256-60KI |
256K x 16 (4-Mbit) DRAM with EDO page mode, 60ns |
ICSI |
94 |
IS41LV16256-60KI |
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
Integrated Silicon Solution Inc |
95 |
IS41LV16256-60T |
256K x 16 (4-Mbit) DRAM with EDO page mode, 60ns |
ICSI |
96 |
IS41LV16256-60T |
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
Integrated Silicon Solution Inc |
97 |
IS41LV16256-60TI |
256K x 16 (4-Mbit) DRAM with EDO page mode, 60ns |
ICSI |
98 |
IS41LV16256-60TI |
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
Integrated Silicon Solution Inc |
99 |
M5LV-512/256-6AC |
Fifth Generation MACH Architecture |
Lattice Semiconductor |
100 |
MCR156-60 |
Thyristor PNPN 110 Amperes RMS, 600V |
Motorola |
101 |
T2527N056-6AQ |
Low-voltage highly selective IR receiver IC. Carrier frequency 56 kHz. |
Atmel |
102 |
T2527N256-6AQ |
Low-voltage highly selective IR receiver IC. Carrier frequency 56 kHz. |
Atmel |
103 |
T2527N656-6AQ |
Low-voltage highly selective IR receiver IC. Carrier frequency 56 kHz. |
Atmel |
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