No. |
Part Name |
Description |
Manufacturer |
91 |
K4S560432E-TC |
256Mb E-die SDRAM Specification |
Samsung Electronic |
92 |
K4S560432E-TC75 |
256Mb E-die SDRAM Specification |
Samsung Electronic |
93 |
K4S560432E-TCL75 |
64M x 4 SDRAM, LVTTL, 133MHz |
Samsung Electronic |
94 |
K4S560432E-TL75 |
256Mb E-die SDRAM Specification |
Samsung Electronic |
95 |
K4S560432E-UC |
256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
Samsung Electronic |
96 |
K4S560432E-UC75 |
256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
Samsung Electronic |
97 |
K4S560432E-UL75 |
256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
Samsung Electronic |
98 |
K4T56043QF |
256Mb F-die DDR2 SDRAM |
Samsung Electronic |
99 |
K4T56043QF-GCD5 |
256Mb F-die DDR2 SDRAM |
Samsung Electronic |
100 |
K4T56043QF-ZCD5 |
256Mb F-die DDR2 SDRAM |
Samsung Electronic |
101 |
NTE56043 |
TRIAC, 16 Amp, sensitive gate. Repetitive peak off-state voltage Vdrm = 600V. On-state RMS current 16A. |
NTE Electronics |
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