| No. |
Part Name |
Description |
Manufacturer |
| 91 |
1N985A |
0.5W, silicon zener diode. Zener voltage 100V. Test current 1.3mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 92 |
1N986 |
0.5W, silicon zener diode. Zener voltage 110V. Test current 1.1mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 93 |
1N986A |
0.5W, silicon zener diode. Zener voltage 110V. Test current 1.1mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 94 |
1N987 |
0.5W, silicon zener diode. Zener voltage 120V. Test current 1.0mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 95 |
1N987A |
0.5W, silicon zener diode. Zener voltage 120V. Test current 1.0mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 96 |
1N988 |
0.5W, silicon zener diode. Zener voltage 130V. Test current 0.95mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 97 |
1N988A |
0.5W, silicon zener diode. Zener voltage 130V. Test current 0.95mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 98 |
1N989 |
0.5W, silicon zener diode. Zener voltage 150V. Test current 0.85mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 99 |
1N989A |
0.5W, silicon zener diode. Zener voltage 150V. Test current 0.85mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 100 |
1N990 |
0.5W, silicon zener diode. Zener voltage 160V. Test current 0.80mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 101 |
1N990A |
0.5W, silicon zener diode. Zener voltage 160V. Test current 0.80mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 102 |
1N991 |
0.5W, silicon zener diode. Zener voltage 180V. Test current 0.68mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 103 |
1N991A |
0.5W, silicon zener diode. Zener voltage 180V. Test current 0.68mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 104 |
1N992 |
0.5W, silicon zener diode. Zener voltage 200V. Test current 0.65mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 105 |
1N992A |
0.5W, silicon zener diode. Zener voltage 200V. Test current 0.65mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 106 |
2N5921 |
5W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Transistor |
RCA Solid State |
| 107 |
2N6391 |
5W, 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
| 108 |
2N6486 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 50V. |
General Electric Solid State |
| 109 |
2N6487 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 70V. |
General Electric Solid State |
| 110 |
2N6488 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 90V. |
General Electric Solid State |
| 111 |
2N6489 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -50V. |
General Electric Solid State |
| 112 |
2N6490 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -70V. |
General Electric Solid State |
| 113 |
2N6491 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -90V. |
General Electric Solid State |
| 114 |
40893 |
15W, 470MHz Emitter-Ballasted Overlay Silicon NPN RF Transistor |
RCA Solid State |
| 115 |
40940 |
5W, 400MHz Silicon NPN Overlay Transistor for VHF/UHF High-Power Amplifiers, Warning - device contains beryllium oxide |
RCA Solid State |
| 116 |
AMR960-35E |
Linear Power Amplifier 35W, 925-960MHz, 26Vcc |
Motorola |
| 117 |
AMR960-35HE |
Linear Power Amplifier 35W, 925-960MHz, 26Vcc, designed for Cellular Radio GSM, NMT, E-TACS, AMPS applications |
Motorola |
| 118 |
AMR960-35HU |
Linear Power Amplifier 35W, 860-900MHz, 26Vcc |
Motorola |
| 119 |
AMR960-35U |
Linear Power Amplifier 35W, 860-900MHz, 26Vcc |
Motorola |
| 120 |
BZY91-C10R |
Silicon voltage regulator diode 75W, reverse polarity (stud-anode) |
Mullard |
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