| No. |
Part Name |
Description |
Manufacturer |
| 91 |
IC41LV16256-35T |
256Kx16 bit Dynamic RAM with EDO Page Mode |
Integrated Circuit Solution Inc |
| 92 |
IC41LV16256-35TG |
256Kx16 bit Dynamic RAM with EDO Page Mode |
Integrated Circuit Solution Inc |
| 93 |
IC41LV16256-35TI |
256Kx16 bit Dynamic RAM with EDO Page Mode |
Integrated Circuit Solution Inc |
| 94 |
IC41LV16256-35TIG |
256Kx16 bit Dynamic RAM with EDO Page Mode |
Integrated Circuit Solution Inc |
| 95 |
IS41C16256-35K |
256K x 16 (4-Mbit) DRAM with EDO page mode, 35ns |
ICSI |
| 96 |
IS41C16256-35K |
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
Integrated Silicon Solution Inc |
| 97 |
IS41C16256-35KI |
256K x 16 (4-Mbit) DRAM with EDO page mode, 35ns |
ICSI |
| 98 |
IS41C16256-35KI |
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
Integrated Circuit Solution Inc |
| 99 |
IS41C16256-35T |
256K x 16 (4-Mbit) DRAM with EDO page mode, 35ns |
ICSI |
| 100 |
IS41C16256-35T |
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
Integrated Silicon Solution Inc |
| 101 |
IS41C16256-35TI |
256K x 16 (4-Mbit) DRAM with EDO page mode, 35ns |
ICSI |
| 102 |
IS41C16256-35TI |
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
Integrated Circuit Solution Inc |
| 103 |
IS41LV16256-35K |
256K x 16 (4-Mbit) DRAM with EDO page mode, 35ns |
ICSI |
| 104 |
IS41LV16256-35K |
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
Integrated Silicon Solution Inc |
| 105 |
IS41LV16256-35T |
256K x 16 (4-Mbit) DRAM with EDO page mode, 35ns |
ICSI |
| 106 |
IS41LV16256-35T |
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
Integrated Silicon Solution Inc |
| 107 |
IS41LV32256-35PQ |
256K x 32(8-MBIT) edo dynamic RAM 3.3V 100/83/66MHz |
Integrated Silicon Solution Inc |
| 108 |
IS41LV32256-35TQ |
256K x 32(8-MBIT) edo dynamic RAM 3.3V 100/83/66MHz |
Integrated Silicon Solution Inc |
| 109 |
LH5496-35 |
CMOS 512 X 9 FIFO |
SHARP |
| 110 |
M27256-35 |
256K(32K x 8) UV ERASABLE PROM |
Intel |
| 111 |
M27C516-35C1TR |
512 Kbit 32Kb x16 OTP EPROM |
ST Microelectronics |
| 112 |
M27C516-35C6TR |
512 Kbit 32Kb x16 OTP EPROM |
ST Microelectronics |
| 113 |
M27C516-35N1TR |
512 Kbit 32Kb x16 OTP EPROM |
ST Microelectronics |
| 114 |
M27C516-35N6TR |
512 Kbit 32Kb x16 OTP EPROM |
ST Microelectronics |
| 115 |
M27C516-35XC1TR |
512 Kbit 32Kb x16 OTP EPROM |
ST Microelectronics |
| 116 |
M27C516-35XC6TR |
512 Kbit 32Kb x16 OTP EPROM |
ST Microelectronics |
| 117 |
M27C516-35XN1TR |
512 Kbit 32Kb x16 OTP EPROM |
ST Microelectronics |
| 118 |
M27C516-35XN6TR |
512 Kbit 32Kb x16 OTP EPROM |
ST Microelectronics |
| 119 |
MCM68766-35 |
350ns; V(in/out): +6 to -0.3V; 8192 x 8-bit UV erasable PROM |
Motorola |
| 120 |
P4C116-35DM |
35 ns,Static CMOS RAM, 2 K x 8 ultra high speed |
Performance Semiconductor Corporation |
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