No. |
Part Name |
Description |
Manufacturer |
91 |
K4E661612C-TC50 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
92 |
K4E661612C-TC60 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
93 |
K4E661612C-TL45 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
94 |
K4E661612C-TL50 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
95 |
K4E661612C-TL60 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
96 |
K4F641612C |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
97 |
K4F641612C-L |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
98 |
K4F641612C-TC |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
99 |
K4F641612C-TC45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns |
Samsung Electronic |
100 |
K4F641612C-TC50 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns |
Samsung Electronic |
101 |
K4F641612C-TC60 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns |
Samsung Electronic |
102 |
K4F641612C-TL45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
103 |
K4F641612C-TL50 |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
104 |
K4F641612C-TL60 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power |
Samsung Electronic |
105 |
K4F661612C |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
106 |
K4F661612C-L |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
107 |
K4F661612C-TC |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
108 |
K4F661612C-TC45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns |
Samsung Electronic |
109 |
K4F661612C-TC50 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns |
Samsung Electronic |
110 |
K4F661612C-TC60 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns |
Samsung Electronic |
111 |
K4F661612C-TL45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
112 |
K4F661612C-TL50 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power |
Samsung Electronic |
113 |
K4F661612C-TL60 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power |
Samsung Electronic |
114 |
LTC2612CMS8 |
Dual 16-/14-/12-Bit Rail-to-Rail DACs in 8-Lead MSOP |
Linear Technology |
115 |
LTC2612CMS8#PBF |
Dual 14-Bit Rail-to-Rail DACs in 8-Lead MSOP |
Linear Technology |
116 |
LTC2612CMS8#TR |
Dual 14-Bit Rail-to-Rail DACs in 8-Lead MSOP |
Linear Technology |
117 |
LTC2612CMS8#TRPBF |
Dual 14-Bit Rail-to-Rail DACs in 8-Lead MSOP |
Linear Technology |
118 |
MAX4612C/D |
Low-Voltage / Quad / SPST CMOS Analog Switches |
MAXIM - Dallas Semiconductor |
119 |
MAX4612CPD |
Low-Voltage / Quad / SPST CMOS Analog Switches |
MAXIM - Dallas Semiconductor |
120 |
MAX4612CPD+ |
Low-Voltage, Quad, SPST CMOS Analog Switches |
MAXIM - Dallas Semiconductor |
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