| No. |
Part Name |
Description |
Manufacturer |
| 91 |
2035-6364-00 |
1-2 GHz, 3 dB hybrid coupler |
MA-Com |
| 92 |
2035-6365-00 |
2-4 GHz, 3 dB hybrid coupler |
MA-Com |
| 93 |
2035-6366-00 |
2.6-5.2 GHz, 3 dB hybrid coupler |
MA-Com |
| 94 |
2035-6367-00 |
4-8 GHz, 3 dB hybrid coupler |
MA-Com |
| 95 |
2035-6368-00 |
8-12.4 GHz, 3 dB hybrid coupler |
MA-Com |
| 96 |
2035-6369-00 |
12.4-18 GHz, 3 dB hybrid coupler |
MA-Com |
| 97 |
210-91-636-41-001 |
Dual-in-line sockets Closed frame Solder tail |
Precid-Dip Durtal |
| 98 |
210-93-636-41-001 |
Dual-in-line sockets Closed frame Solder tail |
Precid-Dip Durtal |
| 99 |
210-97-636-41-001 |
Dual-in-line sockets Closed frame Solder tail |
Precid-Dip Durtal |
| 100 |
210-99-636-41-001 |
Dual-in-line sockets Closed frame Solder tail |
Precid-Dip Durtal |
| 101 |
299-91-636-10-002 |
Dual-in-line sockets / right angle version Closed frame Solder tail |
Precid-Dip Durtal |
| 102 |
299-93-636-10-002 |
Dual-in-line sockets / right angle version Closed frame Solder tail |
Precid-Dip Durtal |
| 103 |
2N1636 |
Germanium PNP Transistor |
Motorola |
| 104 |
2N2636 |
Germanium PNP Transistor |
Motorola |
| 105 |
2N3636 |
GENERAL PURPOSE TRANSISTOR (PNP SILICON) |
Boca Semiconductor Corporation |
| 106 |
2N3636 |
1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
| 107 |
2N3636 |
PNP Transistor |
Microsemi |
| 108 |
2N3636 |
PNP silicon transistor |
Motorola |
| 109 |
2N3636 |
Silicon PNP Transistor |
Motorola |
| 110 |
2N3636 |
Medium Power PNP Transistor |
National Semiconductor |
| 111 |
2N3636 |
PNP Silicon Transistor |
Texas Instruments |
| 112 |
2N3636 |
PNP Silicon Medium Power Transistor (up to 25 watts) |
Transitron Electronic |
| 113 |
2N3636 J |
Medium Power PNP Transistor |
National Semiconductor |
| 114 |
2N3636 JTX |
Medium Power PNP Transistor |
National Semiconductor |
| 115 |
2N3636L |
PNP Transistor |
Microsemi |
| 116 |
2N3636S |
PNP silicon annular transistor for high-voltage switching and low-power amplifier applications |
Motorola |
| 117 |
2N3636UB |
PNP Transistor |
Microsemi |
| 118 |
2N5636 |
NPN Silicon RF Power Transistor |
Motorola |
| 119 |
2N5636 |
Trans GP BJT NPN 100V 10A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
| 120 |
2N5636 |
WIDEBAND VHF-UHF Class C NPN epitaxial planar silicon Transistor |
SGS Thomson Microelectronics |
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