No. |
Part Name |
Description |
Manufacturer |
91 |
NMC27C64 |
65,536-Bit (8192 x 8) CMOS PROM |
National Semiconductor |
92 |
NMC27C64N150 |
150 ns, Vcc=5V+/-10%, 65,536-bit (8k x 8) one time programmable CMOS PROM |
National Semiconductor |
93 |
NMC27C64N200 |
200 ns, Vcc=5V+/-10%, 65,536-bit (8k x 8) one time programmable CMOS PROM |
National Semiconductor |
94 |
NMC27C64N250 |
250 ns, Vcc=5V+/-10%, 65,536-bit (8k x 8) one time programmable CMOS PROM |
National Semiconductor |
95 |
NMC27C64Q150 |
150 ns, Vcc=5V+/-10%, 65,536-bit (8k x 8) UV erasable CMOS PROM |
National Semiconductor |
96 |
NMC27C64Q200 |
200 ns, Vcc=5V+/-10%, 65,536-bit (8k x 8) UV erasable CMOS PROM |
National Semiconductor |
97 |
NMC27C64Q250 |
250 ns, Vcc=5V+/-10%, 65,536-bit (8k x 8) UV erasable CMOS PROM |
National Semiconductor |
98 |
NMC27C64Q300 |
300 ns, Vcc=5V+/-10%, 65,536-bit (8k x 8) UV erasable CMOS PROM |
National Semiconductor |
99 |
NMC27C64QE150 |
150 ns, Vcc=5V+/-10%, 65,536-bit (8k x 8) UV erasable CMOS PROM |
National Semiconductor |
100 |
NMC27C64QE200 |
200 ns, Vcc=5V+/-10%, 65,536-bit (8k x 8) UV erasable CMOS PROM |
National Semiconductor |
101 |
NMC27C64QM200 |
200 ns, Vcc=5V+/-10%, 65,536-bit (8k x 8) UV erasable CMOS PROM |
National Semiconductor |
102 |
NMC27C64QM250 |
250 ns, Vcc=5V+/-10%, 65,536-bit (8k x 8) UV erasable CMOS PROM |
National Semiconductor |
103 |
S6B33B0A |
144 RGB Segment & 177 Common Driver For 65,536 Color STN LCD |
Samsung Electronic |
104 |
TC531024F-12 |
120ns; 5V; 1M bit (65,536 word x 16bit) CMOS MASK ROM |
TOSHIBA |
105 |
TC531024F-15 |
150ns; 5V; 1M bit (65,536 word x 16bit) CMOS MASK ROM |
TOSHIBA |
106 |
TC531024P-12 |
120ns; 5V; 1M bit (65,536 word x 16bit) CMOS MASK ROM |
TOSHIBA |
107 |
TC531024P-15 |
150ns; 5V; 1M bit (65,536 word x 16bit) CMOS MASK ROM |
TOSHIBA |
108 |
TC54H1024F-10 |
100 ns; V(cc): -0.6 to +7V; 1.5W; 65,536 word x 16 bit one time programmable read only memory |
TOSHIBA |
109 |
TC54H1024F-85 |
85 ns; V(cc): -0.6 to +7V; 1.5W; 65,536 word x 16 bit one time programmable read only memory |
TOSHIBA |
110 |
TC54H1024P-10 |
100 ns; V(cc): -0.6 to +7V; 1.5W; 65,536 word x 16 bit one time programmable read only memory |
TOSHIBA |
111 |
TC54H1024P-85 |
85 ns; V(cc): -0.6 to +7V; 1.5W; 65,536 word x 16 bit one time programmable read only memory |
TOSHIBA |
112 |
TC551664AJ |
65,536-WORD BY 16-BIT CMOS STATIC RAM |
TOSHIBA |
113 |
TC551664AJ-15 |
65,536-WORD BY 16-BIT CMOS STATIC RAM |
TOSHIBA |
114 |
TC551664AJ-20 |
65,536-WORD BY 16-BIT CMOS STATIC RAM |
TOSHIBA |
115 |
TC551664BFT-12 |
65,536-WORD BY 16-BIT CMOS STATIC RAM |
TOSHIBA |
116 |
TC551664BFT-15 |
65,536-WORD BY 16-BIT CMOS STATIC RAM |
TOSHIBA |
117 |
TC551664BJ |
65,536-WORD BY 16-BIT CMOS STATIC RAM |
TOSHIBA |
118 |
TC551664BJ-12 |
65,536-WORD BY 16-BIT CMOS STATIC RAM |
TOSHIBA |
119 |
TC551664BJ-15 |
65,536-WORD BY 16-BIT CMOS STATIC RAM |
TOSHIBA |
120 |
TC5565AFL-10 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
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