| No. |
Part Name |
Description |
Manufacturer |
| 91 |
2N6765 |
FET DEVICES WITH N_CHANNEL POLARITY |
New Jersey Semiconductor |
| 92 |
2N6766 |
N-Channel Power MOSFETs/ 30A/ 150V/200V |
Fairchild Semiconductor |
| 93 |
2N6766 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
| 94 |
2N6766 |
200V Single N-Channel Hi-Rel MOSFET in a TO-204AE package |
International Rectifier |
| 95 |
2N6766 |
N-Channel |
Microsemi |
| 96 |
2N6766 |
Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-204AE |
New Jersey Semiconductor |
| 97 |
2N6766 |
N-channel enhancement mode MOSFET power transistor |
Omnirel |
| 98 |
2N6766 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 30A |
Siliconix |
| 99 |
2N6766BX5 |
Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-204AE |
New Jersey Semiconductor |
| 100 |
2N6766E3 |
N-Channel |
Microsemi |
| 101 |
2N6766T1 |
N-Channel |
Microsemi |
| 102 |
2N6766T1E3 |
N-Channel |
Microsemi |
| 103 |
2N6767 |
N-Channel Power MOSFETs/ 15A/ 350V/400V |
Fairchild Semiconductor |
| 104 |
2N6767 |
FET DEVICES WITH N_CHANNEL POLARITY |
New Jersey Semiconductor |
| 105 |
2N6768 |
N-Channel Power MOSFETs/ 15A/ 350V/400V |
Fairchild Semiconductor |
| 106 |
2N6768 |
400V Single N-Channel Hi-Rel MOSFET in a TO-204AE package |
International Rectifier |
| 107 |
2N6768 |
N-Channel |
Microsemi |
| 108 |
2N6768 |
Trans MOSFET N-CH 400V 14A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 109 |
2N6768 |
N-channel enhancement mode MOSFET power transistor |
Omnirel |
| 110 |
2N6768 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 14A |
Siliconix |
| 111 |
2N6768E3 |
N-Channel |
Microsemi |
| 112 |
2N6768T1 |
N-Channel |
Microsemi |
| 113 |
2N6768T1E3 |
N-Channel |
Microsemi |
| 114 |
2N6769 |
N-Channel Power MOSFETs/ 12A/ 450V/500V |
Fairchild Semiconductor |
| 115 |
2N6769 |
FET DEVICES WITH N_CHANNEL POLARITY |
New Jersey Semiconductor |
| 116 |
2SB676 |
Silicon PNP Power Transistors TO-220C package |
Savantic |
| 117 |
2SB676 |
Silicon PNP epitaxial darlington power switching transistor |
TOSHIBA |
| 118 |
2SB676 |
2SB676 |
TOSHIBA |
| 119 |
2SB676 |
2SB676 |
TOSHIBA |
| 120 |
2SC3676 |
NPN Triple Diffused Planar Silicon Transistor 900V/300mA High-Voltage Amplifier High-Voltage Switching Applications |
SANYO |
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