No. |
Part Name |
Description |
Manufacturer |
91 |
TC51832FL-85 |
85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
92 |
TC51832P-10 |
100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
93 |
TC51832P-12 |
120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
94 |
TC51832P-85 |
85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
95 |
TC51832PL-10 |
100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
96 |
TC51832PL-12 |
120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
97 |
TC51832PL-85 |
85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
98 |
TC51832SP-10 |
100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
99 |
TC51832SP-12 |
120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
100 |
TC51832SP-85 |
85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
101 |
TC51832SPL-10 |
100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
102 |
TC51832SPL-12 |
120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
103 |
TC51832SPL-85 |
85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
104 |
TC54256AF |
32768 word x 8-bit CMOC one time programmable read only memory, 200ns |
TOSHIBA |
105 |
TC54256AP |
32768 word x 8-bit CMOC one time programmable read only memory, 200ns |
TOSHIBA |
106 |
TC55257BFL |
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM |
TOSHIBA |
107 |
TC55257BFL-10 |
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM |
TOSHIBA |
108 |
TC55257BFL-10L |
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM |
TOSHIBA |
109 |
TC55257BFL-85 |
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM |
TOSHIBA |
110 |
TC55257BFL-85L |
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM |
TOSHIBA |
111 |
TC55257BFTL |
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM |
TOSHIBA |
112 |
TC55257BFTL-10 |
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM |
TOSHIBA |
113 |
TC55257BFTL-10L |
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM |
TOSHIBA |
114 |
TC55257BFTL-85 |
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM |
TOSHIBA |
115 |
TC55257BFTL-85L |
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM |
TOSHIBA |
116 |
TC55257BPL |
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM |
TOSHIBA |
117 |
TC55257BPL-10 |
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM |
TOSHIBA |
118 |
TC55257BPL-10L |
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM |
TOSHIBA |
119 |
TC55257BPL-85L |
85ns; V(dd/in): -0.3 to +7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM |
TOSHIBA |
120 |
TC55257BSPL-10L |
100ns; V(dd/in): -0.3 to +7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM |
TOSHIBA |
| | | |