| No. |
Part Name |
Description |
Manufacturer |
| 91 |
HZ36C2 |
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
Hitachi Semiconductor |
| 92 |
HZ6C2 |
Diodes>Zener |
Renesas |
| 93 |
HZ6C2L |
Diodes>Zener |
Renesas |
| 94 |
HZS6C2 |
Diodes>Zener |
Renesas |
| 95 |
HZS6C2L |
Diodes>Zener |
Renesas |
| 96 |
HZU6C2L |
Diodes>Zener |
Renesas |
| 97 |
JBZX46C2V7 |
Voltage regulator diode (chips) 0.5W 2.7V |
SESCOSEM |
| 98 |
K3P6C2000B-SC |
32M-Bit (2Mx16/1Mx32) CMOS MASK ROM Data Sheet |
Samsung Electronic |
| 99 |
KM416C254D |
256K x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 100 |
KM416C254DJ-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, 8ms refresh period |
Samsung Electronic |
| 101 |
KM416C254DJ-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, 8ms refresh period |
Samsung Electronic |
| 102 |
KM416C254DJ-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, 8ms refresh period |
Samsung Electronic |
| 103 |
KM416C254DJL-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh |
Samsung Electronic |
| 104 |
KM416C254DJL-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh |
Samsung Electronic |
| 105 |
KM416C254DJL-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh |
Samsung Electronic |
| 106 |
KM416C254DT-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, 8ms refresh period |
Samsung Electronic |
| 107 |
KM416C254DT-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, 8ms refresh period |
Samsung Electronic |
| 108 |
KM416C254DT-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, 8ms refresh period |
Samsung Electronic |
| 109 |
KM416C254DTL-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh |
Samsung Electronic |
| 110 |
KM416C254DTL-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh |
Samsung Electronic |
| 111 |
KM416C254DTL-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh |
Samsung Electronic |
| 112 |
KM416C256D |
256K x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 113 |
KM416C256DJ-5 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 5V |
Samsung Electronic |
| 114 |
KM416C256DJ-6 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 5V |
Samsung Electronic |
| 115 |
KM416C256DJ-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 5V |
Samsung Electronic |
| 116 |
KM416C256DLJ-5 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 5V, self-refresh capability |
Samsung Electronic |
| 117 |
KM416C256DLJ-6 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 5V, self-refresh capability |
Samsung Electronic |
| 118 |
KM416C256DLJ-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 5V, self-refresh capability |
Samsung Electronic |
| 119 |
KM416C256DLT-5 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 5V, self-refresh capability |
Samsung Electronic |
| 120 |
KM416C256DLT-6 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 5V, self-refresh capability |
Samsung Electronic |
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