| No. |
Part Name |
Description |
Manufacturer |
| 91 |
MI-QC6NX-MVX |
Military DC-DC Power Supplies |
Vicor Corporation |
| 92 |
MI-QC6NX-MVY |
Military DC-DC Power Supplies |
Vicor Corporation |
| 93 |
MI-QC6NX-MWY |
Military DC-DC Power Supplies |
Vicor Corporation |
| 94 |
MI-QC6NX-MXY |
Military DC-DC Power Supplies |
Vicor Corporation |
| 95 |
MI-QC6NX-MYY |
Military DC-DC Power Supplies |
Vicor Corporation |
| 96 |
OR06NXZ31 |
Rectifier diode |
TOSHIBA |
| 97 |
ORO6NXZ31 |
Rectifier diode |
TOSHIBA |
| 98 |
PBSS306NX |
100 V, 4.5 A NPN low VCEsat (BISS) transistor |
Nexperia |
| 99 |
PBSS306NX |
100 V, 4.5 A NPN low VCEsat (BISS) transistor |
NXP Semiconductors |
| 100 |
W6NXD0K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 101 |
W6NXD0KLSR-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 102 |
W6NXD3J-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 103 |
W6NXD3K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 104 |
W6NXD3L-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| | | |
