No. |
Part Name |
Description |
Manufacturer |
91 |
DS1100LZ-175 |
3.3V 5-tap economy timing element (delay line), 175ns |
Dallas Semiconductor |
92 |
DS1100LZ-75 |
3.3V 5-tap economy timing element (delay line), 75ns |
Dallas Semiconductor |
93 |
DS1100M-175 |
5-tap economy timing element (delay line), 175ns |
Dallas Semiconductor |
94 |
DS1100M-75 |
5-tap economy timing element (delay line), 75ns |
Dallas Semiconductor |
95 |
DS1100U-175 |
5-tap economy timing element (delay line), 175ns |
Dallas Semiconductor |
96 |
DS1100U-75 |
5-tap economy timing element (delay line), 75ns |
Dallas Semiconductor |
97 |
DS1100Z-175 |
5-tap economy timing element (delay line), 175ns |
Dallas Semiconductor |
98 |
DS1100Z-75 |
5-tap economy timing element (delay line), 75ns |
Dallas Semiconductor |
99 |
DS2175N |
T1/CEPT Elastic Store |
Dallas Semiconductor |
100 |
DS2175N |
T1/CEPT Elastic Store |
MAXIM - Dallas Semiconductor |
101 |
DS275N |
Line-Powered RS-232 Transceiver Chip |
MAXIM - Dallas Semiconductor |
102 |
DS275N+ |
Line-Powered RS-232 Transceiver Chip |
MAXIM - Dallas Semiconductor |
103 |
DTV32 |
High Voltage Damper Diodes, Forward Current 10A, Reverse Voltage 1500V, Reverse Recovery Time 175ns |
Vishay |
104 |
DTV32B |
High Voltage Damper Diodes, Forward Current 10A, Reverse Voltage 1500V, Reverse Recovery Time 175ns |
Vishay |
105 |
DTV32F |
High Voltage Damper Diodes, Forward Current 10A, Reverse Voltage 1500V, Reverse Recovery Time 175ns |
Vishay |
106 |
E175D |
Quad memory flip-flop, possibly equivalent SN8475N |
RFT |
107 |
FDB075N15A |
N-Channel PowerTrench� MOSFET 150V, 130A, 7.5m? |
Fairchild Semiconductor |
108 |
FDB075N15A_F085 |
N-Channel Power Trench� MOSFET 150V, 110A, 7.5m? |
Fairchild Semiconductor |
109 |
FDP075N15A |
N-Channel PowerTrench� MOSFET 150V, 130A, 7.5m? |
Fairchild Semiconductor |
110 |
FDP75N08A |
N-Channel UniFETTM MOSFET 75V, 75A, 11m? |
Fairchild Semiconductor |
111 |
FGH75N60SF |
Discrete IGBT |
Fairchild Semiconductor |
112 |
FGH75N60UF |
600V, 75A, Field Stop IGBT |
Fairchild Semiconductor |
113 |
FGY75N60SMD |
600V, 75A, Field Stop IGBT |
Fairchild Semiconductor |
114 |
FJJ181/7475N |
Quadruple bistable latching circuits with Q and QX̅ outputs for use as temporary storage |
Mullard |
115 |
GS8160E18T-166I |
75ns 166MHz 1M x 18 synchronous burst SRAM |
GSI Technology |
116 |
HM628128BLFP-75 |
75ns; V(cc): -0.5 to +7.0V; 1W; 1M SRAM (128-Kword x 8-bit) |
Hitachi Semiconductor |
117 |
HM628128BLFP-75SL |
75ns; V(cc): -0.5 to +7.0V; 1W; 1M SRAM (128-Kword x 8-bit) |
Hitachi Semiconductor |
118 |
HM628128BLT-75 |
75ns; V(cc): -0.5 to +7.0V; 1W; 1M SRAM (128-Kword x 8-bit) |
Hitachi Semiconductor |
119 |
HM628128BLT-75SL |
75ns; V(cc): -0.5 to +7.0V; 1W; 1M SRAM (128-Kword x 8-bit) |
Hitachi Semiconductor |
120 |
I74F175N |
Quad D flip-flop |
Philips |
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