No. |
Part Name |
Description |
Manufacturer |
91 |
HM514400BZ-8 |
1,048,576-word x 4-bit dynamic random access memory, 80ns |
Hitachi Semiconductor |
92 |
HM514400C |
1/048/576-word X 4-bit Dynamic Random Access Memory |
Hitachi Semiconductor |
93 |
HM514400CL |
1/048/576-word X 4-bit Dynamic Random Access Memory |
Hitachi Semiconductor |
94 |
HM514400CLS-6 |
1,048,576-word x 4-bit dynamic random access memory, 60ns |
Hitachi Semiconductor |
95 |
HM514400CLS-7 |
1,048,576-word x 4-bit dynamic random access memory, 70ns |
Hitachi Semiconductor |
96 |
HM514400CLS-8 |
1,048,576-word x 4-bit dynamic random access memory, 80ns |
Hitachi Semiconductor |
97 |
HM514400CLTT-6 |
1,048,576-word x 4-bit dynamic random access memory, 60ns |
Hitachi Semiconductor |
98 |
HM514400CLTT-7 |
1,048,576-word x 4-bit dynamic random access memory, 70ns |
Hitachi Semiconductor |
99 |
HM514400CLTT-8 |
1,048,576-word x 4-bit dynamic random access memory, 80ns |
Hitachi Semiconductor |
100 |
HM514400CLZ-6 |
1,048,576-word x 4-bit dynamic random access memory, 60ns |
Hitachi Semiconductor |
101 |
HM514400CLZ-7 |
1,048,576-word x 4-bit dynamic random access memory, 70ns |
Hitachi Semiconductor |
102 |
HM514400CLZ-8 |
1,048,576-word x 4-bit dynamic random access memory, 80ns |
Hitachi Semiconductor |
103 |
HM514400CS-6 |
1,048,576-word x 4-bit dynamic random access memory, 60ns |
Hitachi Semiconductor |
104 |
HM514400CS-7 |
1,048,576-word x 4-bit dynamic random access memory, 70ns |
Hitachi Semiconductor |
105 |
HM514400CS-8 |
1,048,576-word x 4-bit dynamic random access memory, 80ns |
Hitachi Semiconductor |
106 |
HM514400CTT-6 |
1,048,576-word x 4-bit dynamic random access memory, 60ns |
Hitachi Semiconductor |
107 |
HM514400CTT-7 |
1,048,576-word x 4-bit dynamic random access memory, 70ns |
Hitachi Semiconductor |
108 |
HM514400CTT-8 |
1,048,576-word x 4-bit dynamic random access memory, 80ns |
Hitachi Semiconductor |
109 |
HM514400CZ-6 |
1,048,576-word x 4-bit dynamic random access memory, 60ns |
Hitachi Semiconductor |
110 |
HM514400CZ-7 |
1,048,576-word x 4-bit dynamic random access memory, 70ns |
Hitachi Semiconductor |
111 |
HM514400CZ-8 |
1,048,576-word x 4-bit dynamic random access memory, 80ns |
Hitachi Semiconductor |
112 |
HM530281RTT-20 |
20ns; V(cc): -1.0 to +7.0V; 1W; ; 331,776-word x 8-bit flame memory |
Hitachi Semiconductor |
113 |
HM530281RTT-25 |
25ns; V(cc): -1.0 to +7.0V; 1W; ; 331,776-word x 8-bit flame memory |
Hitachi Semiconductor |
114 |
HM530281RTT-34 |
34ns; V(cc): -1.0 to +7.0V; 1W; ; 331,776-word x 8-bit flame memory |
Hitachi Semiconductor |
115 |
HM530281RTT-45 |
45ns; V(cc): -1.0 to +7.0V; 1W; ; 331,776-word x 8-bit flame memory |
Hitachi Semiconductor |
116 |
HN62408 |
524288-WORD X 16-BIT/1048576-WORD X 8-BIT CMOS MASK PROGRAMMABLE ROM |
Hitachi Semiconductor |
117 |
HN62408FP |
524288-WORD X 16-BIT/1048576-WORD X 8-BIT CMOS MASK PROGRAMMABLE ROM |
Hitachi Semiconductor |
118 |
HN62408P |
524288-WORD X 16-BIT/1048576-WORD X 8-BIT CMOS MASK PROGRAMMABLE ROM |
Hitachi Semiconductor |
119 |
LC378000RP |
Internally Synchronized Silicon Gate 8M (1,048,576-word x 8-bit, 524,288-word x 16-bit) Mask ROM |
SANYO |
120 |
M5M29FB800VP |
8 /388 /608-BIT (1048 /576-576-WORD BY 8-BIT / 524 /288-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
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