| No. |
Part Name |
Description |
Manufacturer |
| 91 |
BTY91-800R |
P-Gate Silicon Thyristor |
Philips |
| 92 |
BYX13-800R |
Silicon Rectifier Diode, intended for power rectifier applications, reverse polarity |
Philips |
| 93 |
BYX25-800R |
Controlled avalanche diode |
mble |
| 94 |
BYX25-800R |
Silicon avalanche rectifier diode, reverse polarity (stud-anode) |
Mullard |
| 95 |
BYX25-800R |
Controlled Avalanche Rectifier Diode, reverse polarity |
Philips |
| 96 |
BYX32-800R |
Rectifier diode |
mble |
| 97 |
BYX32-800R |
Silicon Rectifier Diode VRRM 800V reverse polarity |
Philips |
| 98 |
BYX33-800R |
Silicon Rectifier Diode, reverse polarity |
Philips |
| 99 |
BYX39-800R |
Controlled avalanche diode |
mble |
| 100 |
BYX39-800R |
Silicon avalanche rectifier diode, reverse polarity (stud-anode) |
Mullard |
| 101 |
BYX39-800R |
Controlled Avalanche Rectifier Diode, reverse polarity 800V |
Philips |
| 102 |
BYX40-800R |
Controlled avalanche diode |
mble |
| 103 |
BYX40-800R |
Silicon avalanche rectifier diode, reverse polarity (stud-anode) |
Mullard |
| 104 |
BYX40-800R |
Controlled Avalanche Rectifier Diode, reverse polarity 800V |
Philips |
| 105 |
BYX45-800R |
Controlled avalanche diode |
mble |
| 106 |
BYX45-800R |
Silicon avalanche rectifier diode |
Mullard |
| 107 |
BYX45-800R |
800V Controlled Avalanche Rectifier Diode, anode to case |
Philips |
| 108 |
BYX56-800R |
Controlled avalanche diode |
mble |
| 109 |
BYX56-800R |
Silicon avalanche rectifier diode, reverse polarity (stud-anode) |
Mullard |
| 110 |
BYX56-800R |
Controlled Avalanche Rectifier Diode, reverse polarity |
Philips |
| 111 |
DRV8800RTYR |
2.8A Brushed DC Motor Driver (PH/EN Ctrl) 16-QFN -40 to 85 |
Texas Instruments |
| 112 |
DRV8800RTYT |
2.8A Brushed DC Motor Driver (PH/EN Ctrl) 16-QFN -40 to 85 |
Texas Instruments |
| 113 |
ESM181-800R |
Silicon rectifier diode - fast recovery series |
SESCOSEM |
| 114 |
ESM181-800R |
Silicon diodes, signal and fast rectification |
SESCOSEM |
| 115 |
FD800R33KF2 |
IGBT-Module |
Eupec |
| 116 |
FZ800R12KS4 |
IGBT-Module |
Eupec |
| 117 |
HM514800RR-10 |
100ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 118 |
HM514800RR-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 119 |
HM514800RR-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 120 |
M5M29FB800RV-10 |
CMOS 3.3V-only, block erase flash memory |
Mitsubishi Electric Corporation |
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