No. |
Part Name |
Description |
Manufacturer |
91 |
LMK04808 |
Low-Noise Clock Jitter Cleaner with Dual Loop PLLs and Integrated 2.9 GHz VCO |
Texas Instruments |
92 |
LMK04808BISQ/NOPB |
Low-Noise Clock Jitter Cleaner with Dual Loop PLLs and Integrated 2.9 GHz VCO 64-WQFN -40 to 85 |
Texas Instruments |
93 |
LMK04808BISQE/NOPB |
Low-Noise Clock Jitter Cleaner with Dual Loop PLLs and Integrated 2.9 GHz VCO 64-WQFN -40 to 85 |
Texas Instruments |
94 |
LMK04808BISQX/NOPB |
Low-Noise Clock Jitter Cleaner with Dual Loop PLLs and Integrated 2.9 GHz VCO 64-WQFN -40 to 85 |
Texas Instruments |
95 |
LMX2119 |
1.9 GHz Power Amplifier |
National Semiconductor |
96 |
LMX2119M |
1.9 GHz Power Amplifier |
National Semiconductor |
97 |
LMX2119MX |
1.9 GHz Power Amplifier |
National Semiconductor |
98 |
MA1046-1 |
For 1.9 GHz - Power Amplifier |
Mitsubishi Electric Corporation |
99 |
MA1065-1 |
For 1.9 GHz - High Power Amplifier |
Mitsubishi Electric Corporation |
100 |
MNA-2 |
Monolithic Amplifiers High Directivity, 50��, 0.5 to 5.9 GHz |
Mini-Circuits |
101 |
MNA-3 |
Monolithic Amplifiers High Directivity, 50��, 0.5 to 5.9 GHz |
Mini-Circuits |
102 |
MNA-4 |
Monolithic Amplifiers High Directivity, 50��, 0.5 to 5.9 GHz |
Mini-Circuits |
103 |
MNA-5 |
Monolithic Amplifiers High Directivity, 50��, 0.5 to 5.9 GHz |
Mini-Circuits |
104 |
MNA-6 |
Monolithic Amplifiers High Directivity, 50��, 0.5 to 5.9 GHz |
Mini-Circuits |
105 |
MNA-7 |
Monolithic Amplifiers High Directivity, 50��, 0.5 to 5.9 GHz |
Mini-Circuits |
106 |
MNA-SERIES |
Monolithic Amplifiers High Directivity, 50��, 0.5 to 5.9 GHz |
Mini-Circuits |
107 |
MRF18030B |
MRF18030BR3, MRF18030BSR3 GSM/GSM EDGE 1.93 - 1.99 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
108 |
MRF18030BLR3 |
GSM/GSM EDGE 1.93–1.99 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
109 |
MRF18030BLSR3 |
GSM/GSM EDGE 1.93–1.99 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
110 |
MRF18030BR3 |
GSM/GSM EDGE 1.93–1.99 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
111 |
MRF18030BSR3 |
GSM/GSM EDGE 1.93–1.99 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
112 |
MRF18060B |
MRF18060B, MRF18060BR3, MRF18060BLSR3, MRF18060BSR3 1.90-1.99 GHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
113 |
MRF18060BLSR3 |
1.90–1.99 GHz, 60 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
114 |
MRF18060BR3 |
1.90–1.99 GHz, 60 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
115 |
MRF18060BSR3 |
1.90–1.99 GHz, 60 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
116 |
MRF18085B |
MRF18085B, MRF18085BR3, MRF18085BLSR3 GSM/GSM EDGE 1.9-1.99 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
117 |
MRF18090BR3 |
1.90–1.99 GHz, 90 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
118 |
MRF18090BSR3 |
1.90–1.99 GHz, 90 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
119 |
MRFIC1805 |
1.9 GHz POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT |
Motorola |
120 |
MRFIC1808 |
1.9 GHz GaAs LOW NOISE AMPLIFIER |
Motorola |
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