No. |
Part Name |
Description |
Manufacturer |
91 |
GT9-25S-2.54DSA(05) |
Developed for Equipment Exposed to Harsh Environmental Conditions |
Hirose Electric |
92 |
HF8509-25 |
HIGH POWER LATCHING RELAY |
etc |
93 |
HS9-2510RH-Q |
Radiation Hardened High Slew Rate Operational Amplifier |
Intersil |
94 |
LX8819-25CDF |
Low Drop Out Regulator - Dual |
Microsemi |
95 |
LX8819-25CDFT |
Dual channel 1A low dropout regulator. Output V1: adj.(pin 4). Output V2: 2.5V (pin 5). |
Microsemi |
96 |
LX8819-25CDT |
Low Drop Out Regulator - Dual |
Microsemi |
97 |
LX8819-25CDTT |
Dual channel 1A low dropout regulator. Output V1: adj.(pin 4). Output V2: 2.5V (pin 5). |
Microsemi |
98 |
NJM12901 |
PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS, 2.70-2.90 GHz, 100��s PULSE, 10% DUTY |
Tyco Electronics |
99 |
NJM12901D1 |
PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS, 2.70-2.90 GHz, 100��s PULSE, 10% DUTY |
Tyco Electronics |
100 |
NJM12901E |
PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS, 2.70-2.90 GHz, 100��s PULSE, 10% DUTY |
Tyco Electronics |
101 |
NJM12901M |
PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS, 2.70-2.90 GHz, 100��s PULSE, 10% DUTY |
Tyco Electronics |
102 |
NJM12901V |
PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS, 2.70-2.90 GHz, 100��s PULSE, 10% DUTY |
Tyco Electronics |
103 |
P4C149-25PC |
25 ns,Static CMOS RAM, 1 K x 4 ultra high speed |
Performance Semiconductor Corporation |
104 |
P4C169-25PC |
25 ns,static CMOS RAM, 4 K x 4 ultra high speed |
Performance Semiconductor Corporation |
105 |
P4C169-25SC |
25 ns,static CMOS RAM, 4 K x 4 ultra high speed |
Performance Semiconductor Corporation |
106 |
PH2729-25M |
2700-2900 MHz, 25 W,100 ms, radar pulsed power transistor |
MA-Com |
107 |
PH2729-25M |
RADAR PULSED POWER TRANSISTOR 25 WATTS, 2.70-2.90 GHz, 100ms PULSE, 10% DUTY |
Tyco Electronics |
108 |
PSMN0R9-25YLC |
N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology |
Nexperia |
109 |
PSMN0R9-25YLC |
N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology |
NXP Semiconductors |
110 |
PSMN0R9-25YLD |
N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology |
Nexperia |
111 |
PSMN1R9-25YLC |
N-channel 25 V 2.05 mΩ logic level MOSFET in LFPAK using NextPower technology |
NXP Semiconductors |
112 |
PSMN2R9-25YLC |
N-channel 25 V 3.15 mΩ logic level MOSFET in LFPAK using NextPower technology |
Nexperia |
113 |
PSMN2R9-25YLC |
N-channel 25 V 3.15 mΩ logic level MOSFET in LFPAK using NextPower technology |
NXP Semiconductors |
114 |
PSMN3R9-25MLC |
N-channel 25 V 4.15 mΩ logic level MOSFET in LFPAK33 using NextPower Technology |
Nexperia |
115 |
PSMN3R9-25MLC |
N-channel 25 V 4.15 mΩ logic level MOSFET in LFPAK33 using NextPower Technology |
NXP Semiconductors |
116 |
RT9169-25CCB |
2.5V, 100mA quiescent current CMOS LDO regulator |
RichTek |
117 |
RT9169-25CV |
2.6V, 100mA quiescent current CMOS LDO regulator |
RichTek |
118 |
RT9169-25CX |
2.5V, 100mA quiescent current CMOS LDO regulator |
RichTek |
119 |
RT9169-25CZL |
2.5V, 100mA quiescent current CMOS LDO regulator |
RichTek |
120 |
RT9169-25CZT |
2.5V, 100mA quiescent current CMOS LDO regulator |
RichTek |
| | | |