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Datasheets for 90

Datasheets found :: 1320
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No. Part Name Description Manufacturer
91 2722 162 02661 Circulators/Isolators 1890 to 2110 MHz Philips
92 2722 162 06041 ISOLATORS for P.C. Board Mounting, frequency range 1890 to 1990 MHz Philips
93 2722 162 06041 ISOLATORS for P.C. Board Mounting, frequency range 1890 to 1990 MHz Philips
94 2EZ190 190 V, 2 W, glass passivated junction silicon zener diode TRANSYS Electronics Limited
95 2EZ190 190 V, 0.5 A, 2 W, glass passivated junction silicon zener diode TRSYS
96 2N3251A 0.360W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.200A Ic, 90 hFE. Continental Device India Limited
97 2N6315 Power NPN silicon transistor. 7.0 A, 60 V, 90 W. Motorola
98 2N6316 Power NPN silicon transistor. 7.0 A, 80 V, 90 W. Motorola
99 2N6317 Power PNP silicon transistor. 7.0 A, 60 V, 90 W. Motorola
100 2N6318 Power PNP silicon transistor. 7.0 A, 80 V, 90 W. Motorola
101 2N6577 15 A N-P-N darlington power transistor. 90 V. 120 W. Gain of 2000 at 4 A. General Electric Solid State
102 2N7002BKT 60 V, 290 mA N-channel Trench MOSFET Nexperia
103 2N7002BKT 60 V, 290 mA N-channel Trench MOSFET NXP Semiconductors
104 2SA1366 150mW SMD PNP transistor, maximum rating: -50V Vceo, -400mA Ic, 90 to 500 hFE. Complementary 2SC3441 Isahaya Electronics Corporation
105 2SA790 2SA790 2SA791 2SA830 2SA831 ROHM
106 2SA791 2SA790 2SA791 2SA830 2SA831 ROHM
107 2SA830 2SA790 2SA791 2SA830 2SA831 ROHM
108 2SA831 2SA790 2SA791 2SA830 2SA831 ROHM
109 2SC2558K Class C, 860 MHz 12 volt power transistor (This datasheet of NE080190 series is also the datasheet of 2SC2558K, see the Electrical Characteristics table) NEC
110 2SC2559K Class C, 860 MHz 12 volt power transistor (This datasheet of NE080490 series is also the datasheet of 2SC2559K, see the Electrical Characteristics table) NEC
111 2SC2850K Class C, 860 MHz 12 volt power transistor (This datasheet of NE081090 series is also the datasheet of 2SC2850K, see the Electrical Characteristics table) NEC
112 2SC3581 900mW Lead frame NPN transistor, maximum rating: 50V Vceo, 400mA Ic, 90 to 500 hFE. Complementary 2SA1399 Isahaya Electronics Corporation
113 2V250 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 390 V @ 1mA DC test current. NTE Electronics
114 3032 90 CROSSOVER HYBRID COUPLER 800-900,890-960, OR 1700-1900 MHZ Tyco Electronics
115 3032-6017-00 800-900 MHz, 3dB, 90 crossover hybrid coupler MA-Com
116 3032-6018-00 890-960 MHz, 3dB, 90 crossover hybrid coupler MA-Com
117 3032-6019-00 1700-1900 MHz, 3dB, 90 crossover hybrid coupler MA-Com
118 3EZ190 190 V, 3 W, glass passivated junction silicon zener diode TRANSYS Electronics Limited
119 3EZ190D 3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, +-20% tolerance. Jinan Gude Electronic Device
120 3EZ190D1 3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, +-1% tolerance. Jinan Gude Electronic Device


Datasheets found :: 1320
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