| No. |
Part Name |
Description |
Manufacturer |
| 91 |
AS29LV800B-90SI |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 90ns access time |
Alliance Semiconductor |
| 92 |
AS29LV800B-90TC |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 90ns access time |
Alliance Semiconductor |
| 93 |
AS29LV800B-90TI |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 90ns access time |
Alliance Semiconductor |
| 94 |
AS29LV800T-90SC |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 90ns access time |
Alliance Semiconductor |
| 95 |
AS29LV800T-90SI |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 90ns access time |
Alliance Semiconductor |
| 96 |
AS29LV800T-90TC |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 90ns access time |
Alliance Semiconductor |
| 97 |
AS29LV800T-90TI |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 90ns access time |
Alliance Semiconductor |
| 98 |
AT49F008A-90CC |
90ns; 50mA; V(in): -0.6 to +6.25V; V(out): -0.6 to +0.6V; 8-megabit (1M x 8/512K x 16) falsh memory |
Atmel |
| 99 |
AT49F008A-90CI |
90ns; 50mA; V(in): -0.6 to +6.25V; V(out): -0.6 to +0.6V; 8-megabit (1M x 8/512K x 16) falsh memory |
Atmel |
| 100 |
AT49F008A-90TC |
90ns; 50mA; V(in): -0.6 to +6.25V; V(out): -0.6 to +0.6V; 8-megabit (1M x 8/512K x 16) falsh memory |
Atmel |
| 101 |
AT49F008A-90TI |
90ns; 50mA; V(in): -0.6 to +6.25V; V(out): -0.6 to +0.6V; 8-megabit (1M x 8/512K x 16) falsh memory |
Atmel |
| 102 |
AT49F008AT-90CC |
90ns; 50mA; V(in): -0.6 to +6.25V; V(out): -0.6 to +0.6V; 8-megabit (1M x 8/512K x 16) falsh memory |
Atmel |
| 103 |
AT49F008AT-90CI |
90ns; 50mA; V(in): -0.6 to +6.25V; V(out): -0.6 to +0.6V; 8-megabit (1M x 8/512K x 16) falsh memory |
Atmel |
| 104 |
AT49F008AT-90TC |
90ns; 50mA; V(in): -0.6 to +6.25V; V(out): -0.6 to +0.6V; 8-megabit (1M x 8/512K x 16) falsh memory |
Atmel |
| 105 |
AT49F008AT-90TI |
90ns; 50mA; V(in): -0.6 to +6.25V; V(out): -0.6 to +0.6V; 8-megabit (1M x 8/512K x 16) falsh memory |
Atmel |
| 106 |
AT49F8192A-90CC |
90ns; 50mA; V(in): -0.6 to +6.25V; V(out): -0.6 to +0.6V; 8-megabit (1M x 8/512K x 16) falsh memory |
Atmel |
| 107 |
AT49F8192A-90CI |
90ns; 50mA; V(in): -0.6 to +6.25V; V(out): -0.6 to +0.6V; 8-megabit (1M x 8/512K x 16) falsh memory |
Atmel |
| 108 |
AT49F8192A-90RC |
90ns; 50mA; V(in): -0.6 to +6.25V; V(out): -0.6 to +0.6V; 8-megabit (1M x 8/512K x 16) falsh memory |
Atmel |
| 109 |
AT49F8192A-90RI |
90ns; 50mA; V(in): -0.6 to +6.25V; V(out): -0.6 to +0.6V; 8-megabit (1M x 8/512K x 16) falsh memory |
Atmel |
| 110 |
AT49F8192A-90TC |
90ns; 50mA; V(in): -0.6 to +6.25V; V(out): -0.6 to +0.6V; 8-megabit (1M x 8/512K x 16) falsh memory |
Atmel |
| 111 |
AT49F8192A-90TI |
90ns; 50mA; V(in): -0.6 to +6.25V; V(out): -0.6 to +0.6V; 8-megabit (1M x 8/512K x 16) falsh memory |
Atmel |
| 112 |
AT49F8192AT-90CC |
90ns; 50mA; V(in): -0.6 to +6.25V; V(out): -0.6 to +0.6V; 8-megabit (1M x 8/512K x 16) falsh memory |
Atmel |
| 113 |
AT49F8192AT-90CI |
90ns; 50mA; V(in): -0.6 to +6.25V; V(out): -0.6 to +0.6V; 8-megabit (1M x 8/512K x 16) falsh memory |
Atmel |
| 114 |
AT49F8192AT-90RC |
90ns; 50mA; V(in): -0.6 to +6.25V; V(out): -0.6 to +0.6V; 8-megabit (1M x 8/512K x 16) falsh memory |
Atmel |
| 115 |
AT49F8192AT-90RI |
90ns; 50mA; V(in): -0.6 to +6.25V; V(out): -0.6 to +0.6V; 8-megabit (1M x 8/512K x 16) falsh memory |
Atmel |
| 116 |
AT49F8192AT-90TC |
90ns; 50mA; V(in): -0.6 to +6.25V; V(out): -0.6 to +0.6V; 8-megabit (1M x 8/512K x 16) falsh memory |
Atmel |
| 117 |
AT49F8192AT-90TI |
90ns; 50mA; V(in): -0.6 to +6.25V; V(out): -0.6 to +0.6V; 8-megabit (1M x 8/512K x 16) falsh memory |
Atmel |
| 118 |
C390N |
Thyristor SCR 800V 8KA 3-Pin |
New Jersey Semiconductor |
| 119 |
C390N |
Phase Control SCR 450 Amperes Average 500-1300 Volts |
Powerex Power Semiconductors |
| 120 |
C390NX555 |
Phase Control SCR 590 Amperes Average 1200 Volts |
Powerex Power Semiconductors |
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