| No. |
Part Name |
Description |
Manufacturer |
| 91 |
1SMB5938 |
36 V, 1.5 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
| 92 |
1SMB5938 |
SURFACE MOUNT SILICON ZENER DIODE |
TRSYS |
| 93 |
1SMB5938A |
SILICON ZENER DIODES |
EIC discrete Semiconductors |
| 94 |
1SMB5938A |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 36 V. +-10% tolerance. |
Motorola |
| 95 |
1SMB5938B |
3.0W SURFACE MOUNT POWER ZENER DIODE |
Diodes |
| 96 |
1SMB5938B |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 36 V. +-5% tolerance. |
Motorola |
| 97 |
1SMB5938B |
3 Watt Plastic Surface Mount Silicon Zener Diodes |
ON Semiconductor |
| 98 |
1SMB5938B-13 |
3.0W SURFACE MOUNT POWER ZENER DIODE |
Diodes |
| 99 |
1SMB5938BT3 |
PLASTIC SURFACE MOUNT ZENER DIODES 3 WATTS 3.3.200 VOLTS |
Motorola |
| 100 |
1SMB5938BT3 |
3 Watt Plastic Surface Mount Silicon Zener Diodes |
ON Semiconductor |
| 101 |
2N4938 |
Leaded Small Signal Transistor Dual |
Central Semiconductor |
| 102 |
2N4938 |
Trans GP BJT PNP 200V 0.2A 3-Pin TO-39 |
New Jersey Semiconductor |
| 103 |
2N938 |
Trans GP BJT NPN 45V 0.03A 3-Pin TO-18 |
New Jersey Semiconductor |
| 104 |
2SB0938 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 105 |
2SB0938A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 106 |
2SB938 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 107 |
2SB938A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 108 |
2SC2938 |
POWER TRANSISTORS(10A,400V,100W) |
MOSPEC Semiconductor |
| 109 |
2SC3938 |
Small-signal device - Small-signal transistor - High-Speed Switch�VCO and High Freq. |
Panasonic |
| 110 |
2SC3938G |
Silicon NPN epitaxial planar type |
Panasonic |
| 111 |
2SC5938 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 112 |
2SC5938A |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 113 |
2SC5938B |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 114 |
2SD1938 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 115 |
2SD1938F |
Silicon NPN epitaxial planar type |
Panasonic |
| 116 |
2SK1938 |
Power MOSFET |
Fuji Electric |
| 117 |
2SK1938-01R |
Power MOSFET |
Fuji Electric |
| 118 |
2SK2938 |
Silicon N Channel MOS FET/ High Speed Power Switching |
Hitachi Semiconductor |
| 119 |
2SK2938(L) |
Power switching MOSFET |
Hitachi Semiconductor |
| 120 |
2SK2938(S) |
Power switching MOSFET |
Hitachi Semiconductor |
| | | |
