| No. |
Part Name |
Description |
Manufacturer |
| 91 |
1N5253D |
25 V, 5.0 mA, zener diode |
Leshan Radio Company |
| 92 |
1N5360B |
25 V, 50 mA, 5 W glass passivated zener diode |
Fagor |
| 93 |
1N5360B |
25 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 94 |
1N5829 |
25A, 20V ultra fast recovery rectifier |
MCC |
| 95 |
1N5829 |
25 Amp Schottky Barrier Rectifier 20 to 35 Volts |
Micro Commercial Components |
| 96 |
1N5830 |
25A, 25V ultra fast recovery rectifier |
MCC |
| 97 |
1N5830 |
25 Amp Schottky Barrier Rectifier 20 to 35 Volts |
Micro Commercial Components |
| 98 |
1N5831 |
25A, 35V ultra fast recovery rectifier |
MCC |
| 99 |
1N5831 |
25 Amp Schottky Barrier Rectifier 20 to 35 Volts |
Micro Commercial Components |
| 100 |
1N6095 |
25A, 30V ultra fast recovery rectifier |
MCC |
| 101 |
1N6095 |
25 Amp Schottky 30 to 40 Volts |
Micro Commercial Components |
| 102 |
1N6096 |
25A, 40V ultra fast recovery rectifier |
MCC |
| 103 |
1N6096 |
25 Amp Schottky 30 to 40 Volts |
Micro Commercial Components |
| 104 |
1N695A |
25 V, 500 mA, gold bonded diode |
BKC International Electronics |
| 105 |
1N996 |
25 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 106 |
1S764H |
Silicon Difused Junction, Zener Diode Vz=25.0...32.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 107 |
1SMC5360 |
25 V, 5 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
| 108 |
2021-25 |
25 W, 24 V, 2000-2130 MHz common base transistor |
GHz Technology |
| 109 |
20KW256 |
256.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 110 |
20KW256A |
256.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 111 |
20PS |
25PS, 42PS, 44PS, 45PS and 46PS Series Pressure Switches |
Texas Instruments |
| 112 |
22C10 |
256-BitNonvolatileCMOSStaticRAM |
Catalyst Semiconductor |
| 113 |
22DGQ045 |
25A 45V Hi-Rel Schottky Doubler Diode in a TO-254AA package |
International Rectifier |
| 114 |
2425-25 |
25 W, 24 V, 2410-2470 MHz common base transistor |
GHz Technology |
| 115 |
24AA256ESM |
256K I2C CMOS Serial EEPROM |
Microchip |
| 116 |
24AA256IP |
256K I2C CMOS Serial EEPROM |
Microchip |
| 117 |
24AA256ISM |
256K I2C CMOS Serial EEPROM |
Microchip |
| 118 |
24AA256T-I_P |
256K I2C CMOS EEPROM |
Microchip |
| 119 |
24C256 |
256KBit 2-Wire Bus Interface Serial EEPROM with Write Protect |
Fairchild Semiconductor |
| 120 |
24C44 |
256-Bit Serial Nonvolatile CMOS Static RAM |
Catalyst Semiconductor |
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