| No. |
Part Name |
Description |
Manufacturer |
| 91 |
GS880F32BT-6.5I |
6.5ns 256K x 32 9Mb sync burst SRAM |
GSI Technology |
| 92 |
GS880F36AT-6.5 |
6.5ns 256K x 36 8Mb sync burst SRAM |
GSI Technology |
| 93 |
GS880F36AT-6.5I |
6.5ns 256K x 36 8Mb sync burst SRAM |
GSI Technology |
| 94 |
GS880F36BT-6.5 |
6.5ns 256K x 36 9Mb sync burst SRAM |
GSI Technology |
| 95 |
GS880F36BT-6.5I |
6.5ns 256K x 36 9Mb sync burst SRAM |
GSI Technology |
| 96 |
HUF76113SK8 |
6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
Fairchild Semiconductor |
| 97 |
HUF76113SK8 |
6.5A/ 30V/ 0.030 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET |
Intersil |
| 98 |
HUF76113SK8T |
6.5A, 30V, .0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
Fairchild Semiconductor |
| 99 |
IC61SF25632D-6.5B |
6.5ns; 2.5-3.3V; 256K x 32; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 100 |
IC61SF25632D-6.5BI |
6.5ns; 2.5-3.3V; 256K x 32; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 101 |
IC61SF25632D-6.5TQ |
6.5ns; 2.5-3.3V; 256K x 32; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 102 |
IC61SF25632D-6.5TQI |
6.5ns; 2.5-3.3V; 256K x 32; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 103 |
IC61SF25632T-6.5TQ |
6.5ns; 2.5-3.3V; 256K x 32; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 104 |
IC61SF25632T-6.5TQI |
6.5ns; 2.5-3.3V; 256K x 32; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 105 |
IC61SF25636D-6.5B |
6.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 106 |
IC61SF25636D-6.5BI |
6.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 107 |
IC61SF25636D-6.5Q |
6.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 108 |
IC61SF25636D-6.5QI |
6.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 109 |
IC61SF25636T-6.5TQ |
6.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 110 |
IC61SF25636T-6.5TQI |
6.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 111 |
IC61SF51218D-6.5B |
6.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 112 |
IC61SF51218D-6.5BI |
6.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 113 |
IC61SF51218D-6.5TQ |
6.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 114 |
IC61SF51218D-6.5TQI |
6.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 115 |
IC61SF51218T-6.5TQ |
6.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 116 |
IC61SF51218T-6.5TQI |
6.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 117 |
IRF9630 |
6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs |
Fairchild Semiconductor |
| 118 |
IRF9630 |
6.5A/ 200V/ 0.800 Ohm/ P-Channel Power MOSFETs |
Intersil |
| 119 |
IRFF9130 |
6.5A/ -100V/ 0.300 Ohm/ P-Channel Power MOSFET |
Intersil |
| 120 |
IRG4BC20UDS |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A) |
International Rectifier |
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