No. |
Part Name |
Description |
Manufacturer |
91 |
DS90CR288AMTD/NOPB |
+3.3V Rising Edge Data Strobe LVDS 28-Bit Channel Link Receiver - 85 MHz 56-TSSOP -10 to 70 |
Texas Instruments |
92 |
DS90CR288AMTDX |
+3.3V Rising Edge Data Strobe LVDS 28-Bit Channel Link Receiver - 85 MHz |
National Semiconductor |
93 |
DS90CR288AMTDX |
+3.3V Rising Edge Data Strobe LVDS 28-Bit Channel Link Receiver - 85 MHz 56-TSSOP -10 to 70 |
Texas Instruments |
94 |
DS90CR288AMTDX/NOPB |
+3.3V Rising Edge Data Strobe LVDS 28-Bit Channel Link Receiver - 85 MHz 56-TSSOP -10 to 70 |
Texas Instruments |
95 |
DS90CR288MTD |
+3.3V Rising Edge Data Strobe LVDS 28-Bit Channel Link Receiver - 75 MHz [Life-time buy] |
National Semiconductor |
96 |
DS90CR288MTDX |
+3.3V Rising Edge Data Strobe LVDS 28-Bit Channel Link Receiver - 75 MHz [Life-time buy] |
National Semiconductor |
97 |
DS_K4D263238D |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
98 |
FJC2098 |
Camera Strobe Flash Application |
Fairchild Semiconductor |
99 |
HA12062AMP |
Data Strobe IC Developed For R-DAT |
Hitachi Semiconductor |
100 |
ISL5761_2IA |
210MHz; 10-bit, +3.3V, 130/210+MSPS, commlink high speed D/A converter. For cellular infrastructure- single or multi-carrier: IS-136, IS-95, GSM, EDGE, CDMA2000, WCDMA, TDS-CDMA, BWA structure, etc. |
Intersil |
101 |
ISL5761_2IB |
210MHz; 10-bit, +3.3V, 130/210+MSPS, commlink high speed D/A converter. For cellular infrastructure- single or multi-carrier: IS-136, IS-95, GSM, EDGE, CDMA2000, WCDMA, TDS-CDMA, BWA structure, etc. |
Intersil |
102 |
ISL5861_2IA |
210MHz; 3.6V; 12-bit, +3.3V, 130/210+MSPS, commlink high speed D/A converter. For cellular infrastructure- single or multi-carrier: IS-136, IS-95, GSM, EDGE, CDMA2000, WCDMA, TDS-CDMA, BWA structure, etc. |
Intersil |
103 |
ISL5861_2IB |
210MHz; 3.6V; 12-bit, +3.3V, 130/210+MSPS, commlink high speed D/A converter. For cellular infrastructure- single or multi-carrier: IS-136, IS-95, GSM, EDGE, CDMA2000, WCDMA, TDS-CDMA, BWA structure, etc. |
Intersil |
104 |
ISL5961_2IA |
3.6V; 14-bit, +3.3V, 130/210+MSPS, commlink high speed D/A converter. For cellular infrastructure- single or multi-carrier: IS-136, IS-95, GSM, EDGE, CDMA2000, WCDMA, TDS-CDMA, BWA structure, etc. |
Intersil |
105 |
ISL5961_2IB |
3.6V; 14-bit, +3.3V, 130/210+MSPS, commlink high speed D/A converter. For cellular infrastructure- single or multi-carrier: IS-136, IS-95, GSM, EDGE, CDMA2000, WCDMA, TDS-CDMA, BWA structure, etc. |
Intersil |
106 |
K4D263238A |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
107 |
K4D263238A-GC33 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
108 |
K4D263238A-GC36 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
109 |
K4D263238A-GC40 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
110 |
K4D263238A-GC45 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
111 |
K4D263238A-GC50 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
112 |
K4D263238D |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
113 |
K4D263238D-QC40 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
114 |
K4D263238D-QC50 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
115 |
K4D263238E |
1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
116 |
K4D263238E-GC25 |
1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
117 |
K4D263238E-GC2A |
1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
118 |
K4D263238E-GC33 |
1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
119 |
K4D263238E-GC36 |
1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
120 |
K4D263238E-GC40 |
1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
| | | |