| No. |
Part Name |
Description |
Manufacturer |
| 91 |
CDBA5817-HF |
Halogen Free Schottky Barrier Diodes, VRRM=20V, VR=20V, IO=1A |
Comchip Technology |
| 92 |
CDBA5818 |
SMD Schottky Barrier Rectifier |
Comchip Technology |
| 93 |
CDBA5818-HF |
Halogen Free Schottky Barrier Diodes, VRRM=30V, VR=30V, IO=1A |
Comchip Technology |
| 94 |
CDBA5819 |
SMD Schottky Barrier Rectifier |
Comchip Technology |
| 95 |
CDBA5819-G |
Schottky Barrier Rectifiers Diodes, VRRM=40V, VR=40V, IO=1A |
Comchip Technology |
| 96 |
CDBA5819-HF |
Halogen Free Schottky Barrier Diodes, VRRM=40V, VR=40V, IO=1A |
Comchip Technology |
| 97 |
ESJA58-06A |
High Voltage Silicon Diode |
Fuji Electric |
| 98 |
ESJA58-08A |
High Voltage Silicon Diode |
Fuji Electric |
| 99 |
FQA58N08 |
80V N-Channel MOSFET |
Fairchild Semiconductor |
| 100 |
GP1A58HR |
OPIC Photointerrupter |
SHARP |
| 101 |
HSMA5817 |
1.0AMP.SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |
Hi-Sincerity Microelectronics |
| 102 |
HSMA5818 |
1.0AMP.SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |
Hi-Sincerity Microelectronics |
| 103 |
HSMA5819 |
1.0AMP.SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |
Hi-Sincerity Microelectronics |
| 104 |
IRHNA58064 |
60V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package |
International Rectifier |
| 105 |
IRHNA58160 |
100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package |
International Rectifier |
| 106 |
IRHNA58260 |
200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package |
International Rectifier |
| 107 |
IRHNA58Z60 |
30V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package |
International Rectifier |
| 108 |
IRHNA58Z60SCS |
30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package |
International Rectifier |
| 109 |
IRHSNA58064 |
RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT(SMD-2) |
International Rectifier |
| 110 |
JA58560 |
Mask-ROM 8-Bit CMOS Micro-controller |
etc |
| 111 |
JA58560N |
Mask-ROM 8-Bit CMOS Micro-controller |
etc |
| 112 |
JA58560P |
Mask-ROM 8-Bit CMOS Micro-controller |
etc |
| 113 |
MELFSMA5817 |
Surface mount schottky barrier rectifier. Max reccurent peak reverse voltage 20V. Max RMS voltage 14V. Max DC blocking voltage 20V |
Wing Shing Computer Components |
| 114 |
MELFSMA5818 |
Surface mount schottky barrier rectifier. Max reccurent peak reverse voltage 30V. Max RMS voltage 21V. Max DC blocking voltage 30V |
Wing Shing Computer Components |
| 115 |
MELFSMA5819 |
Surface mount schottky barrier rectifier. Max reccurent peak reverse voltage 40V. Max RMS voltage 28V. Max DC blocking voltage 40V |
Wing Shing Computer Components |
| 116 |
NX8563LA581-CC |
Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 240 km (4320 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1558.17 nm. Frequency 192.40 THz. SC-UPC. |
NEC |
| 117 |
NX8563LA581-CD |
Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 240 km (4320 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1558.17 nm. Frequency 192.40 THz. SC-APC. |
NEC |
| 118 |
NX8563LA589-CC |
Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 240 km (4320 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. SC-UPC. |
NEC |
| 119 |
NX8563LA589-CD |
Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 240 km (4320 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. SC-APC. |
NEC |
| 120 |
NX8567SA581-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1558.173nm. Frequency 192.40 THz. FC-UPC connector. |
NEC |
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