| No. |
Part Name |
Description |
Manufacturer |
| 91 |
OA91A |
Germanium Point Contact Type - General Use - High Brakdown Voltage |
Panasonic |
| 92 |
P4SMA91 |
TVS: Unidirectional |
Taiwan Semiconductor |
| 93 |
P4SMA91A |
TVS: Unidirectional |
Taiwan Semiconductor |
| 94 |
P4SMA91C |
TVS: Bidirectional |
Taiwan Semiconductor |
| 95 |
P4SMA91CA |
TVS: Bidirectional |
Taiwan Semiconductor |
| 96 |
PA91 |
HIGH VOLTAGE POWER OPERATIONAL AMPLIFIER |
Apex Microtechnology Corporation |
| 97 |
PA9122AP |
SINGLE PHASE POWER/ENERGY ADAPTOR WITH 64 SEGMENT LCD AND SERIAL INTERFACE |
Sames |
| 98 |
Q62702-A910 |
Silicon Switching Diodes (Switching applications High breakdown voltage) |
Siemens |
| 99 |
Q62702-A911 |
Silicon Switching Diodes (Switching applications High breakdown voltage) |
Siemens |
| 100 |
Q62702-A912 |
Silicon Switching Diodes (Switching applications High breakdown voltage) |
Siemens |
| 101 |
Q62702-A913 |
Silicon Switching Diodes (Switching applications High breakdown voltage) |
Siemens |
| 102 |
Q62702-A914 |
Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode) |
Siemens |
| 103 |
Q62702-A915 |
Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode) |
Siemens |
| 104 |
Q62702-A916 |
Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode) |
Siemens |
| 105 |
Q62702-A917 |
Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode) |
Siemens |
| 106 |
Q62702-A918 |
Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high-speed switching) |
Siemens |
| 107 |
Q62702-A919 |
Silicon Low Leakage Diode (Low-leakage applications Medium speed switching times Single diode) |
Siemens |
| 108 |
QPA9119 |
400 - 4200 MHz, 0.5 Watt High Linearity Amplifier |
Qorvo |
| 109 |
QPA9120 |
High Gain High Linearity Driver Amplifier |
Qorvo |
| 110 |
QPA9121 |
High Gain, 0.5 Watt Driver Amplifier |
Qorvo |
| 111 |
QPA9124 |
3.0 - 5.0 GHz 100 Ohm Differential Output Gain Block |
Qorvo |
| 112 |
QPA9126 |
High Linearity Gain Block |
Qorvo |
| 113 |
QPA9127 |
High Linearity Gain Block |
Qorvo |
| 114 |
QPA9143 |
2.3 - 3.8 GHz 100 Ohm Differential Input Gain Block |
Qorvo |
| 115 |
QPA9154 |
2.3 - 3.8 GHz 100 Ohm Differential Output Gain Block |
Qorvo |
| 116 |
RCA9116C |
Silicon P-N-P epitaxial-base high-power transistor. -140V, 200W. |
General Electric Solid State |
| 117 |
RCA9116D |
Silicon P-N-P epitaxial-base high-power transistor. -120V, 200W. |
General Electric Solid State |
| 118 |
RCA9116E |
Silicon P-N-P epitaxial-base high-power transistor. -100V, 200W. |
General Electric Solid State |
| 119 |
RCA9166A |
Silicon N-P-N epitaxial-base high power transistor. |
General Electric Solid State |
| 120 |
RCA9166B |
Silicon N-P-N epitaxial-base high power transistor. |
General Electric Solid State |
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