No. |
Part Name |
Description |
Manufacturer |
91 |
1N4002 |
100 V, silicon rectifier diode |
BKC International Electronics |
92 |
1N4003 |
200 V, silicon rectifier diode |
BKC International Electronics |
93 |
1N4004 |
400 V, silicon rectifier diode |
BKC International Electronics |
94 |
1N4005 |
600 V, silicon rectifier diode |
BKC International Electronics |
95 |
1N4006 |
800 V, silicon rectifier diode |
BKC International Electronics |
96 |
1N4007 |
1000 V, silicon rectifier diode |
BKC International Electronics |
97 |
1N4009 |
25 V, 500 mW ultra high speed diode |
BKC International Electronics |
98 |
1N4148 |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
99 |
1N4148-1 |
100 V, 500 mW silicon switching diode |
BKC International Electronics |
100 |
1N4149 |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
101 |
1N4150-1 |
75 V, 500 mW silicon switching diode |
BKC International Electronics |
102 |
1N4151 |
50 V, 500 mW high speed diode |
BKC International Electronics |
103 |
1N4152 |
30 V, 500 mW high speed diode |
BKC International Electronics |
104 |
1N4153 |
50 V, 500 mW high speed diode |
BKC International Electronics |
105 |
1N4153-1 |
75 V, 500 mW silicon switching diode |
BKC International Electronics |
106 |
1N4154 |
25 V, 500 mW high speed diode |
BKC International Electronics |
107 |
1N4154-1 |
75 V, 500 mW silicon switching diode |
BKC International Electronics |
108 |
1N417 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
109 |
1N418 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
110 |
1N419 |
80 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
111 |
1N4305 |
50 V, 500 mW ultra fast low capacitance diode |
BKC International Electronics |
112 |
1N4446 |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
113 |
1N4447 |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
114 |
1N4448 |
100 V, 500 mW silicon planar diode |
BKC International Electronics |
115 |
1N4449 |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
116 |
1N4454 |
50 V, 500 mW ultra fast low capacitance diode |
BKC International Electronics |
117 |
1N447 |
75 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
118 |
1N448 |
120 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
119 |
1N449 |
50 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
120 |
1N450 |
120 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
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