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Datasheets for AM8

Datasheets found :: 289
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |
No. Part Name Description Manufacturer
91 AM82223-004 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
92 AM82223-010 TELEMETRY APPLICATIONS RF & MICROWAVE TRANSISTORS SGS Thomson Microelectronics
93 AM82223-010 TELEMETRY APPLICATIONS RF & MICROWAVE TRANSISTORS ST Microelectronics
94 AM82223-012 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
95 AM82223-014 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
96 AM82223-018 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
97 AM82223-020 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
98 AM82324-020 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz SGS Thomson Microelectronics
99 AM82325-040 High power silicon NPN bipolar device optimized for specialized pulsed applications in the 2.3-2.5GHz SGS Thomson Microelectronics
100 AM82327-004 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
101 AM82327-006 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
102 AM82327-010 Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
103 AM82327-015 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
104 AM82729-030 High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
105 AM82729-060 High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
106 AM82731-001 Medium Power Silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications SGS Thomson Microelectronics
107 AM82731-003 S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS SGS Thomson Microelectronics
108 AM82731-003 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS ST Microelectronics
109 AM82731-006 S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS SGS Thomson Microelectronics
110 AM82731-006 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS ST Microelectronics
111 AM82731-012 S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS SGS Thomson Microelectronics
112 AM82731-012 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS ST Microelectronics
113 AM82731-025 S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS SGS Thomson Microelectronics
114 AM82731-025 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS ST Microelectronics
115 AM82731-050 S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS SGS Thomson Microelectronics
116 AM82731-050 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS ST Microelectronics
117 AM82731-075 High Power Silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
118 AM82931-055 High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
119 AM82931-055N High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
120 AM82931-055S High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics


Datasheets found :: 289
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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