| No. |
Part Name |
Description |
Manufacturer |
| 91 |
TU305/10 |
P-Germanium tunnel diode, datasheet in german language |
Siemens |
| 92 |
TU305/5 |
P-Germanium tunnel diode, datasheet in german language |
Siemens |
| 93 |
TU310 |
P-Germanium tunnel diode, datasheet in german language |
Siemens |
| 94 |
TU310/10 |
P-Germanium tunnel diode, datasheet in german language |
Siemens |
| 95 |
TU310/5 |
P-Germanium tunnel diode, datasheet in german language |
Siemens |
| 96 |
TU320 |
P-Germanium tunnel diode, datasheet in german language |
Siemens |
| 97 |
TU320/10 |
P-Germanium tunnel diode, datasheet in german language |
Siemens |
| 98 |
TU320/5 |
P-Germanium tunnel diode, datasheet in german language |
Siemens |
| 99 |
TU410 |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 100 |
TU410/10 |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 101 |
TU410/5 |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 102 |
VG26S17400EJ-5 |
4,194,304 x 4 - Bit CMOS Dynamic RAM |
Vanguard International Semiconductor |
| 103 |
VG26S17400EJ-6 |
4,194,304 x 4 - Bit CMOS Dynamic RAM |
Vanguard International Semiconductor |
| 104 |
VG26S17400FJ-5 |
4,194,304 x 4 - Bit CMOS Dynamic RAM |
Vanguard International Semiconductor |
| 105 |
VG26S17400FJ-6 |
4,194,304 x 4 - Bit CMOS Dynamic RAM |
Vanguard International Semiconductor |
| 106 |
VG26S17405J-5 |
4,194,304 x 4 - Bit CMOS Dynamic RAM |
Vanguard International Semiconductor |
| 107 |
VG26S17405J-6 |
4,194,304 x 4 - Bit CMOS Dynamic RAM |
Vanguard International Semiconductor |
| 108 |
VG26S18165CJ-5 |
1,048,576 x 16 - Bit CMOS Dynamic RAM |
Vanguard International Semiconductor |
| 109 |
VG26S18165CJ-6 |
1,048,576 x 16 - Bit CMOS Dynamic RAM |
Vanguard International Semiconductor |
| 110 |
VG26V17400EJ-5 |
4,194,304 x 4 - Bit CMOS Dynamic RAM |
Vanguard International Semiconductor |
| 111 |
VG26V17400EJ-6 |
4,194,304 x 4 - Bit CMOS Dynamic RAM |
Vanguard International Semiconductor |
| 112 |
VG26V17400FJ-5 |
4,194,304 x 4 - Bit CMOS Dynamic RAM |
Vanguard International Semiconductor |
| 113 |
VG26V17400FJ-6 |
4,194,304 x 4 - Bit CMOS Dynamic RAM |
Vanguard International Semiconductor |
| 114 |
VG26V17405J-5 |
4,194,304 x 4 - Bit CMOS Dynamic RAM |
Vanguard International Semiconductor |
| 115 |
VG26V17405J-6 |
4,194,304 x 4 - Bit CMOS Dynamic RAM |
Vanguard International Semiconductor |
| 116 |
VG26V18165CJ-5 |
1,048,576 x 16 - Bit CMOS Dynamic RAM |
Vanguard International Semiconductor |
| 117 |
VG26V18165CJ-6 |
1,048,576 x 16 - Bit CMOS Dynamic RAM |
Vanguard International Semiconductor |
| 118 |
VG26VS17400E |
4,194,304 x 4 - Bit CMOS Dynamic RAM |
Vanguard International Semiconductor |
| 119 |
VG26VS17400FJ |
4,194,304 x 4 - Bit CMOS Dynamic RAM |
Vanguard International Semiconductor |
| 120 |
VG26VS17405FJ |
4,194,304 x 4 - Bit CMOS Dynamic RAM |
Vanguard International Semiconductor |
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