| No. |
Part Name |
Description |
Manufacturer |
| 91 |
1S77H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
| 92 |
1S78H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
| 93 |
1S79H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
| 94 |
2SD1753 |
Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio) |
Panasonic |
| 95 |
2SD1776 |
Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio) |
Panasonic |
| 96 |
2SD2486 |
Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio) |
Panasonic |
| 97 |
2SD2527 |
Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio) |
Panasonic |
| 98 |
66229 |
CONSTANT CURRENT TRANSFER RATIO, SINGLE CHANNEL OPTOCOUPLERS, SCREENED TO JAN, JANTX, JANTXV |
Micropac Industries |
| 99 |
8765 |
Reflective Material 8765 White Transfer Film |
3M |
| 100 |
AD7112 |
Dual CMOS Multiplying DAC with Anti-Log Transfer Function for Audio Volume Control Applications |
Analog Devices |
| 101 |
ARZ225C05 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement transfer or DPDT. Added function: transfer. Operation voltage, 5 V DC. |
Matsushita Electric Works(Nais) |
| 102 |
ARZ225C05 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement transfer or DPDT. Added function: transfer. Operation voltage, 5 V DC. |
Matsushita Electric Works(Nais) |
| 103 |
ARZ225C12 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement transfer or DPDT. Added function: transfer. Operation voltage, 12 V DC. |
Matsushita Electric Works(Nais) |
| 104 |
ARZ225C12 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement transfer or DPDT. Added function: transfer. Operation voltage, 12 V DC. |
Matsushita Electric Works(Nais) |
| 105 |
ARZ225C24 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement transfer or DPDT. Added function: transfer. Operation voltage 24 V DC. |
Matsushita Electric Works(Nais) |
| 106 |
ARZ225C24 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement transfer or DPDT. Added function: transfer. Operation voltage 24 V DC. |
Matsushita Electric Works(Nais) |
| 107 |
AS172-73 |
PHEMT GaAs IC Transfer Switch DC-2 GHz |
Skyworks Solutions |
| 108 |
AS218-000 |
PHEMT GaAs IC High Power Transfer Switch DC-6 GHz |
Skyworks Solutions |
| 109 |
AS218-321 |
PHEMT GaAs IC High Power Transfer Switch DC-6 GHz |
Skyworks Solutions |
| 110 |
AS218-321LF |
PHEMT GaAs IC High Power Transfer Switch DC?6 GHz |
Skyworks Solutions |
| 111 |
AT71200MCRERB |
8M-pixel color image sensor. Frame transfer version with two memories zones. Anti-reflective window. |
Atmel |
| 112 |
BFQ32 |
Silicon planar epitaxial PNP transistor in a subminiature plastic transfer-moulded T-package, intended for use in UHF and microwave |
Philips |
| 113 |
BFR90 |
NPN silicon planar epitaxial transistor in a subminiature plastic transfer-moulded T-package |
Philips |
| 114 |
BSW88 |
Silicon NPN epitaxial planar switching transistor with high forward current transfer ratio |
AEG-TELEFUNKEN |
| 115 |
BSW89 |
Silicon NPN epitaxial planar switching transistor with high forward current transfer ratio |
AEG-TELEFUNKEN |
| 116 |
BSX81 |
Silicon NPN epitaxial planar switching transistor with high forward current transfer ratio |
AEG-TELEFUNKEN |
| 117 |
DS0097 |
DAICO Switches SPST, TRANSFER |
DAICO Industries |
| 118 |
DS0319 |
DAICO Switches SPST, TRANSFER |
DAICO Industries |
| 119 |
DS92UT16 |
UTOPIA-LVDS Bridge for 1.6 Gbps Bi-directional Data Transfers |
National Semiconductor |
| 120 |
DS92UT16TF |
UTOPIA-LVDS Bridge for 1.6 Gbps Bi-directional Data Transfers |
National Semiconductor |
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