No. |
Part Name |
Description |
Manufacturer |
91 |
HM514400ASLJ-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
92 |
HM514400ASLJ-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
93 |
HM514400ASLR-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
94 |
HM514400ASLR-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
95 |
HM514400ASLR-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
96 |
HM514400ASLRR-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
97 |
HM514400ASLRR-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
98 |
HM514400ASLRR-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
99 |
HM514400ASLS-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
100 |
HM514400ASLS-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
101 |
HM514400ASLS-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
102 |
HM514400ASLT-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
103 |
HM514400ASLT-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
104 |
HM514400ASLT-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
105 |
HM514400ASLTT-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
106 |
HM514400ASLTT-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
107 |
HM514400ASLTT-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
108 |
HM514400ASLZ-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
109 |
HM514400ASLZ-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
110 |
HM514400ASLZ-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
111 |
IC41C44002ASL-50J |
4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
Integrated Circuit Solution Inc |
112 |
IC41C44002ASL-50T |
4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
Integrated Circuit Solution Inc |
113 |
IC41C44002ASL-60J |
4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
Integrated Circuit Solution Inc |
114 |
IC41C44002ASL-60T |
4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
Integrated Circuit Solution Inc |
115 |
IC41LV44002ASL-50J |
4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
Integrated Circuit Solution Inc |
116 |
IC41LV44002ASL-50T |
4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
Integrated Circuit Solution Inc |
117 |
IC41LV44002ASL-60J |
4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
Integrated Circuit Solution Inc |
118 |
IC41LV44002ASL-60T |
4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
Integrated Circuit Solution Inc |
119 |
KM44C4104ASL-5 |
50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
120 |
KM44C4104ASL-6 |
60ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
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