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Datasheets for ASS C

Datasheets found :: 483
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |
No. Part Name Description Manufacturer
91 2SC3816 Class C, 940MHz 7 volt power transistor (This datasheet of NEM090701-07 is also the datasheet of 2SC3816, see the Electrical Characteristics table) NEC
92 3001 CW Class C > 1 GHz Microsemi
93 3003 CW Class C > 1 GHz Microsemi
94 3003 3.0GHz 3.0W 28V microwave power NPN transistor for class C applications SGS Thomson Microelectronics
95 3005 CW Class C > 1 GHz Microsemi
96 3005 3.0GHz 5.0W 28V microwave power NPN transistor for class C applications SGS Thomson Microelectronics
97 4001 Common base silicon NPN microwave power transistor designed for Class C amplifier applications in the 2.0-4.4GHz SGS Thomson Microelectronics
98 4003 Common base silicon NPN microwave power transistor designed for Class C amplifier applications in the 2.0-4.4GHz SGS Thomson Microelectronics
99 40080 Silicon NPN Planar Transistor for class C Operation in 27MHz CB Circuits RCA Solid State
100 40081 Silicon NPN Planar Transistor for class C Operation in 27MHz CB Circuits RCA Solid State
101 40082 Silicon NPN Planar Transistor for class C Operation in 27MHz CB Circuits RCA Solid State
102 40446 Silicon NPN Planar Transistor for class C Operation in 27MHz CB Circuits RCA Solid State
103 40581 Silicon NPN Planar Transistor for class C Operation in 27MHz CB Circuits RCA Solid State
104 40582 Silicon NPN Planar Transistor for class C Operation in 27MHz CB Circuits RCA Solid State
105 40934 High-Power Silicon NPN VHF/UHF Transistor 12.5 Volt type for Class C amplifier applications RCA Solid State
106 7/1/2023 CW Class C > 1 GHz Microsemi
107 80264 NPN power RF transistor designed for Class C linear applications 1-4GHz SGS Thomson Microelectronics
108 81406 28V, Class C, common base NPN bipolar transistor designed for general purpose amplifier applications in the UHF and L-Band SGS Thomson Microelectronics
109 81410 28V, Class C, common base NPN bipolar transistor designed for UHF and L-Band SGS Thomson Microelectronics
110 81416-012 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
111 81416-20 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
112 81416-6 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
113 83000 3.0GHz 0.5W 28V microwave power NPN transistor for class C applications SGS Thomson Microelectronics
114 83001 3.0GHz 1.0W 28V microwave power NPN transistor for class C applications SGS Thomson Microelectronics
115 AM1011-050 High Power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications SGS Thomson Microelectronics
116 AM1011-055 High Power Class C transistor, designed for L-Band Avionics transponder/interrogator output and driver applications SGS Thomson Microelectronics
117 AM1011-060 High power Class C transistor designed for L-Band Avionics transponder/interrogator pulsed output SGS Thomson Microelectronics
118 AM1011-175 High power Class C transistor SGS Thomson Microelectronics
119 AM1011-225 High power Class C transistor designed for L-Band Avionics applications SGS Thomson Microelectronics
120 AM1011-350 High power Class C transistor designed for L-Band Avionics Mode-S transponder/interrogator applications SGS Thomson Microelectronics


Datasheets found :: 483
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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