No. |
Part Name |
Description |
Manufacturer |
91 |
2SC3816 |
Class C, 940MHz 7 volt power transistor (This datasheet of NEM090701-07 is also the datasheet of 2SC3816, see the Electrical Characteristics table) |
NEC |
92 |
3001 |
CW Class C > 1 GHz |
Microsemi |
93 |
3003 |
CW Class C > 1 GHz |
Microsemi |
94 |
3003 |
3.0GHz 3.0W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
95 |
3005 |
CW Class C > 1 GHz |
Microsemi |
96 |
3005 |
3.0GHz 5.0W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
97 |
4001 |
Common base silicon NPN microwave power transistor designed for Class C amplifier applications in the 2.0-4.4GHz |
SGS Thomson Microelectronics |
98 |
4003 |
Common base silicon NPN microwave power transistor designed for Class C amplifier applications in the 2.0-4.4GHz |
SGS Thomson Microelectronics |
99 |
40080 |
Silicon NPN Planar Transistor for class C Operation in 27MHz CB Circuits |
RCA Solid State |
100 |
40081 |
Silicon NPN Planar Transistor for class C Operation in 27MHz CB Circuits |
RCA Solid State |
101 |
40082 |
Silicon NPN Planar Transistor for class C Operation in 27MHz CB Circuits |
RCA Solid State |
102 |
40446 |
Silicon NPN Planar Transistor for class C Operation in 27MHz CB Circuits |
RCA Solid State |
103 |
40581 |
Silicon NPN Planar Transistor for class C Operation in 27MHz CB Circuits |
RCA Solid State |
104 |
40582 |
Silicon NPN Planar Transistor for class C Operation in 27MHz CB Circuits |
RCA Solid State |
105 |
40934 |
High-Power Silicon NPN VHF/UHF Transistor 12.5 Volt type for Class C amplifier applications |
RCA Solid State |
106 |
7/1/2023 |
CW Class C > 1 GHz |
Microsemi |
107 |
80264 |
NPN power RF transistor designed for Class C linear applications 1-4GHz |
SGS Thomson Microelectronics |
108 |
81406 |
28V, Class C, common base NPN bipolar transistor designed for general purpose amplifier applications in the UHF and L-Band |
SGS Thomson Microelectronics |
109 |
81410 |
28V, Class C, common base NPN bipolar transistor designed for UHF and L-Band |
SGS Thomson Microelectronics |
110 |
81416-012 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
111 |
81416-20 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
112 |
81416-6 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
113 |
83000 |
3.0GHz 0.5W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
114 |
83001 |
3.0GHz 1.0W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
115 |
AM1011-050 |
High Power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications |
SGS Thomson Microelectronics |
116 |
AM1011-055 |
High Power Class C transistor, designed for L-Band Avionics transponder/interrogator output and driver applications |
SGS Thomson Microelectronics |
117 |
AM1011-060 |
High power Class C transistor designed for L-Band Avionics transponder/interrogator pulsed output |
SGS Thomson Microelectronics |
118 |
AM1011-175 |
High power Class C transistor |
SGS Thomson Microelectronics |
119 |
AM1011-225 |
High power Class C transistor designed for L-Band Avionics applications |
SGS Thomson Microelectronics |
120 |
AM1011-350 |
High power Class C transistor designed for L-Band Avionics Mode-S transponder/interrogator applications |
SGS Thomson Microelectronics |
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