| No. |
Part Name |
Description |
Manufacturer |
| 91 |
M38B57M6-147FP |
8-BIT SINGLE-CHIP MICROCOMPUTER |
Mitsubishi Electric Corporation |
| 92 |
M38B57M6-150FP |
8-BIT SINGLE-CHIP MICROCOMPUTER |
Mitsubishi Electric Corporation |
| 93 |
M38B57M6-154FP |
8-BIT SINGLE-CHIP MICROCOMPUTER |
Mitsubishi Electric Corporation |
| 94 |
M38B57M6-166FP |
8-BIT SINGLE-CHIP MICROCOMPUTER |
Mitsubishi Electric Corporation |
| 95 |
M38B57M6-XXXFP |
Single Chip 8-Bit CMOS Microcomputer |
Mitsubishi Electric Corporation |
| 96 |
M38B57MC |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
Mitsubishi Electric Corporation |
| 97 |
M38B57MC-111FP |
8-BIT SINGLE-CHIP MICROCOMPUTER |
Mitsubishi Electric Corporation |
| 98 |
M38B57MC-132FP |
8-BIT SINGLE-CHIP MICROCOMPUTER |
Mitsubishi Electric Corporation |
| 99 |
M38B57MC-XXXFP |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
Mitsubishi Electric Corporation |
| 100 |
M38B57MCH-E206FP |
8-BIT SINGLE-CHIP MICROCOMPUTER |
Mitsubishi Electric Corporation |
| 101 |
M38B57MCH-G222FP |
8-BIT SINGLE-CHIP MICROCOMPUTER |
Mitsubishi Electric Corporation |
| 102 |
M38B57MCH-P202FP |
8-BIT SINGLE-CHIP MICROCOMPUTER |
Mitsubishi Electric Corporation |
| 103 |
M38B57MCH-P218FP |
8-BIT SINGLE-CHIP MICROCOMPUTER |
Mitsubishi Electric Corporation |
| 104 |
M38B57MCH-XXXXFP |
Single Chip 8-Bit CMOS Microcomputer |
Mitsubishi Electric Corporation |
| 105 |
MAX-B570 |
THREE-CD CHANGER MINI-COMPACT SYSTEM CD-R/RW PLAYBACK |
Samsung Electronic |
| 106 |
MHB576 |
NMOS IC, resistive LOAD controller |
Tesla Elektronicke |
| 107 |
MIB57T-J |
INFRARED EMITTING DIODE |
Micro Electronics |
| 108 |
MIB57T-K |
INFRARED EMITTING DIODE |
Micro Electronics |
| 109 |
MIB57TA-J |
INFRARED EMITTING DIODE |
Micro Electronics |
| 110 |
MIB57TA-K |
INFRARED EMITTING DIODE |
Micro Electronics |
| 111 |
MJB5742 |
NPN Power Darlington Transistor |
ON Semiconductor |
| 112 |
NX8562LB573-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1557.36 nm. Frequency 192.50 THz. Anode ground. FC-PC connector. |
NEC |
| 113 |
NX8563LB573 |
CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS |
NEC |
| 114 |
NX8563LB573-BA |
CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS |
NEC |
| 115 |
NX8563LB573-CA |
CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS |
NEC |
| 116 |
Q62702-B570 |
Silicon Variable Capacitance Diode (For tuning of extended frequency bands in VHF TV/VTR tuners) |
Siemens |
| 117 |
Q62702-B577 |
Silicon Variable Capacitance Diode (For VHF tuned circuit applications High figure of merit) |
Siemens |
| 118 |
RB578VAM100 |
Schottky Barrier Diode |
ROHM |
| 119 |
RB578VAM100TR |
Schottky Barrier Diode |
ROHM |
| 120 |
RB578VYM100FH |
Schottky Barrier Diodes (corresponds to AEC-Q101) |
ROHM |
| | | |
