| No. |
Part Name |
Description |
Manufacturer |
| 91 |
ERJPB3B9310V |
High Precision Thick Film Chip Resistors |
Panasonic |
| 92 |
ERJPB3B9311V |
High Precision Thick Film Chip Resistors |
Panasonic |
| 93 |
ERJPB3B9312V |
High Precision Thick Film Chip Resistors |
Panasonic |
| 94 |
ERJPB6B9310V |
High Precision Thick Film Chip Resistors |
Panasonic |
| 95 |
ERJPB6B9311V |
High Precision Thick Film Chip Resistors |
Panasonic |
| 96 |
ERJPB6B9312V |
High Precision Thick Film Chip Resistors |
Panasonic |
| 97 |
ERJPB6B9313V |
High Precision Thick Film Chip Resistors |
Panasonic |
| 98 |
IRLIB9343 |
-55V Single P-Channel HEXFET Power MOSFET in a TO-220 Full-Pak package |
International Rectifier |
| 99 |
IRLIB9343PBF |
-55V Single P-Channel HEXFET Power MOSFET in a TO-220 Full-Pak package |
International Rectifier |
| 100 |
LM3S2B93 |
Stellaris LM3S Microcontroller 100-LQFP -40 to 85 |
Texas Instruments |
| 101 |
LM3S2B93-IBA80-C5 |
Stellaris LM3S Microcontroller |
Texas Instruments |
| 102 |
LM3S2B93-IBA80-C5T |
Stellaris LM3S Microcontroller |
Texas Instruments |
| 103 |
LM3S2B93-IBZ80-C5 |
Stellaris LM3S Microcontroller 108-NFBGA -40 to 85 |
Texas Instruments |
| 104 |
LM3S2B93-IBZ80-C5T |
Stellaris LM3S Microcontroller 108-NFBGA -40 to 85 |
Texas Instruments |
| 105 |
LM3S2B93-IQC80-C5 |
Stellaris LM3S Microcontroller 100-LQFP -40 to 85 |
Texas Instruments |
| 106 |
LM3S2B93-IQC80-C5T |
Stellaris LM3S Microcontroller 100-LQFP -40 to 85 |
Texas Instruments |
| 107 |
MHB93448C |
Information for designers |
Tesla Elektronicke |
| 108 |
MHB93448C |
Programmable memory PROM 4096 bits |
Tesla Elektronicke |
| 109 |
MHB93448C |
Entering the contents of the PROM memory |
Tesla Elektronicke |
| 110 |
MHB93451C |
Programmable memory PROM 8192 bits |
Tesla Elektronicke |
| 111 |
MHB93451C |
Information for designers |
Tesla Elektronicke |
| 112 |
MHB93451C |
Entering the contents of the PROM memory |
Tesla Elektronicke |
| 113 |
NX8562LB937-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1593.79 nm. Frequency 188.10 THz. Anode ground. FC-PC connector. |
NEC |
| 114 |
NX8563LB937-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1593.79 nm. Frequency 188.10 THz. FC-PC connector. Anode ground. |
NEC |
| 115 |
OPB930L51 |
Wide gap slotted optical switch |
Optek Technology |
| 116 |
OPB930L55 |
Photologic Slotted Optical Switches |
Optek Technology |
| 117 |
OPB930W |
Photologic Slotted Optical Switches |
Optek Technology |
| 118 |
OPB930W51 |
Wide gap slotted optical switch |
Optek Technology |
| 119 |
OPB930W55 |
Photologic Slotted Optical Switches |
Optek Technology |
| 120 |
OPB931L51 |
Wide gap slotted optical switch |
Optek Technology |
| | | |
