No. |
Part Name |
Description |
Manufacturer |
91 |
BC238BU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
92 |
BC238C |
0.350W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 380 - 800 hFE |
Continental Device India Limited |
93 |
BC238C |
Silicon NPN Epitaxial-Planar Transistor (in german) |
ITT Semiconductors |
94 |
BC238C |
Amplifier Transistors |
Motorola |
95 |
BC238C |
Amplifier Transistor NPN |
ON Semiconductor |
96 |
BC238C |
Silicon NPN transistor, general purpose |
SESCOSEM |
97 |
BC238C |
NPN silicon transistor, audio amplification and general purpose |
SESCOSEM |
98 |
BC238C |
NPN Silicon Transistor for AF pre- and driver stages as well as for universal application |
Siemens |
99 |
BC238CBU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
100 |
BC238CP |
General purpose NPN transistor |
FERRANTI |
101 |
BC238CTA |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
102 |
BC238P |
General purpose NPN transistor |
FERRANTI |
103 |
BC238TAR |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
104 |
BC238TF |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
105 |
BC238TFR |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
106 |
BC239 |
0.350W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 120 - 800 hFE |
Continental Device India Limited |
107 |
BC239 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
108 |
BC239 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
109 |
BC239 |
Silicon NPN Epitaxial-Planar Transistor (in german) |
ITT Semiconductors |
110 |
BC239 |
General Purpose Transistor |
Korea Electronics (KEC) |
111 |
BC239 |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
Micro Electronics |
112 |
BC239 |
Amplifier Transistors |
Motorola |
113 |
BC239 |
Silicon N-P-N low power transistor |
Mullard |
114 |
BC239 |
Transistor NPN |
Siemens |
115 |
BC239 |
NPN Silicon Transistor for AF pre- and driver stages as well as for universal application |
Siemens |
116 |
BC239 |
Tranzystor ma�ej cz�stotliwo�ci ma�ej mocy |
Ultra CEMI |
117 |
BC239 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
118 |
BC239A |
Silicon NPN Epitaxial-Planar Transistor (in german) |
ITT Semiconductors |
119 |
BC239ABU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
120 |
BC239ATA |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
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