No. |
Part Name |
Description |
Manufacturer |
91 |
BD241A |
NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
92 |
BD241ATU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
93 |
BD241B |
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORSS |
Boca Semiconductor Corporation |
94 |
BD241B |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
95 |
BD241B |
PNP power transistor |
FERRANTI |
96 |
BD241B |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 90V, 40W. |
General Electric Solid State |
97 |
BD241B |
NPN SILICON EPITAXIAL BASE POWER TRANSISTORS |
Micro Electronics |
98 |
BD241B |
POWER TRANSISTORS(3A,40W) |
MOSPEC Semiconductor |
99 |
BD241B |
Complementary Silicon Plastic Power Transistors |
Motorola |
100 |
BD241B |
NPN Epitaxial Power Transistor |
National Semiconductor |
101 |
BD241B |
NPN Silicon Power Transistor 40W |
National Semiconductor |
102 |
BD241B |
Trans GP BJT NPN 80V 3A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
103 |
BD241B |
POWER TRANSISTORS COMPLEMENTARY SILICON |
ON Semiconductor |
104 |
BD241B |
NPN SILICON POWER TRANSISTORS |
Power Innovations |
105 |
BD241B |
Silicon NPN Power Transistors TO-220C package |
Savantic |
106 |
BD241B |
NPN Power Transistor Homobase - LF amplifier and switching, complementary BD242B |
SESCOSEM |
107 |
BD241B |
NPN Power Transistor Homobase - LF amplifier and switching, complementary BD242B |
SESCOSEM |
108 |
BD241B |
COMPLEMENTARY SILICON POWER TRANSISTORS |
SGS Thomson Microelectronics |
109 |
BD241B |
COMPLEMENTARY SILICON POWER TRANSISTORS |
SGS Thomson Microelectronics |
110 |
BD241B |
COMPLEMENTARY SILICON POWER TRANSISTORS |
ST Microelectronics |
111 |
BD241B |
90 V, NPN silicon power transistor |
TRANSYS Electronics Limited |
112 |
BD241B |
NPN SILICON POWER TRANSISTOR |
TRSYS |
113 |
BD241B |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
114 |
BD241BFP |
COMPLEMENTARY SILICON POWER TRANSISTORS |
SGS Thomson Microelectronics |
115 |
BD241BFP |
COMPLEMENTARY SILICON POWER TRANSISTORS |
SGS Thomson Microelectronics |
116 |
BD241BFP |
COMPLEMENTARY SILICON POWER TRANSISTORS |
ST Microelectronics |
117 |
BD241BTU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
118 |
BD241C |
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORSS |
Boca Semiconductor Corporation |
119 |
BD241C |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
120 |
BD241C |
PNP power transistor |
FERRANTI |
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