No. |
Part Name |
Description |
Manufacturer |
91 |
BF998A |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
92 |
BF998B |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
93 |
BF998R |
RF-MOSFET - VDS=8V, gfs=24mS, Gps=28dB, F=1dB |
Infineon |
94 |
BF998R |
N-channel dual-gate MOSFET |
NXP Semiconductors |
95 |
BF998R |
Silicon N-channel dual-gate MOS-FETs |
Philips |
96 |
BF998R |
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
Siemens |
97 |
BF998R |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
98 |
BF998RA |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
99 |
BF998RAW |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
100 |
BF998RB |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
101 |
BF998RBW |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
102 |
BF998RW |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
103 |
BF998W |
Silicon N-Channel MOSFET Tetrode |
Infineon |
104 |
BF998W |
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
Siemens |
105 |
BF998WR |
N-channel dual-gate MOSFET |
NXP Semiconductors |
106 |
BF998WR |
N-channel dual-gate MOS-FET |
Philips |
107 |
BF999 |
Silicon N-Channel MOSFET Triode |
Infineon |
108 |
BF999 |
RF-MOSFET - VDS=15V, gfs=16mS, Gp=25dB, F=1dB |
Infineon |
109 |
BF999 |
Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications) |
Siemens |
110 |
ERJA1BF9R1U |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
111 |
ERJB1BF9R1U |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
112 |
ERJB2BF9R1V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
113 |
ERJB3BF9R1V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
114 |
IXBF9N140 |
High Voltage BIMOSFET |
IXYS Corporation |
115 |
IXBF9N160 |
High Voltage BIMOSFET |
IXYS Corporation |
116 |
K4M64163PH-RBF90 |
1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP |
Samsung Electronic |
117 |
MBF9041BB |
SAW Antenna Duplexer (700 to 1000 MHz) |
OKI electronic componets |
118 |
XC2V2000-4BF957C |
Virtex-II 1.5V field programmable gate array. |
Xilinx |
119 |
XC2V2000-4BF957I |
Virtex-II 1.5V field programmable gate array. |
Xilinx |
120 |
XC2V2000-5BF957C |
Virtex-II 1.5V field programmable gate array. |
Xilinx |
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