| No. |
Part Name |
Description |
Manufacturer |
| 91 |
BF998 |
Silicon N-channel dual-gate MOS-FETs |
Philips |
| 92 |
BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 93 |
BF998 |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 94 |
BF998A |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
| 95 |
BF998B |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
| 96 |
BF998R |
RF-MOSFET - VDS=8V, gfs=24mS, Gps=28dB, F=1dB |
Infineon |
| 97 |
BF998R |
N-channel dual-gate MOSFET |
NXP Semiconductors |
| 98 |
BF998R |
Silicon N-channel dual-gate MOS-FETs |
Philips |
| 99 |
BF998R |
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
Siemens |
| 100 |
BF998R |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 101 |
BF998RA |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
| 102 |
BF998RAW |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
| 103 |
BF998RB |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
| 104 |
BF998RBW |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
| 105 |
BF998RW |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 106 |
BF998W |
Silicon N-Channel MOSFET Tetrode |
Infineon |
| 107 |
BF998W |
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
Siemens |
| 108 |
BF998WR |
N-channel dual-gate MOSFET |
NXP Semiconductors |
| 109 |
BF998WR |
N-channel dual-gate MOS-FET |
Philips |
| 110 |
BF999 |
Silicon N-Channel MOSFET Triode |
Infineon |
| 111 |
BF999 |
RF-MOSFET - VDS=15V, gfs=16mS, Gp=25dB, F=1dB |
Infineon |
| 112 |
BF999 |
Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications) |
Siemens |
| 113 |
ERJA1BF9R1U |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 114 |
ERJB1BF9R1U |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 115 |
ERJB2BF9R1V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 116 |
ERJB3BF9R1V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 117 |
IXBF9N140 |
High Voltage BIMOSFET |
IXYS Corporation |
| 118 |
IXBF9N160 |
High Voltage BIMOSFET |
IXYS Corporation |
| 119 |
K4M64163PH-RBF90 |
1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP |
Samsung Electronic |
| 120 |
MBF9041BB |
SAW Antenna Duplexer (700 to 1000 MHz) |
OKI electronic componets |
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