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Datasheets for BISHI E

Datasheets found :: 36747
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No. Part Name Description Manufacturer
91 319SPA-W6M20 INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE Mitsubishi Electric Corporation
92 319SPA-X6M20 INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE Mitsubishi Electric Corporation
93 32170 SINGLE-CHIP 32-BIT CMOS MICROCOMPUTER Mitsubishi Electric Corporation
94 3802 SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER Mitsubishi Electric Corporation
95 3820 SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER Mitsubishi Electric Corporation
96 3850 SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER Mitsubishi Electric Corporation
97 3886GROUP SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER Mitsubishi Electric Corporation
98 38C1 SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER Mitsubishi Electric Corporation
99 38C2 SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER������ Mitsubishi Electric Corporation
100 653SEA2MXX Optoelectronics - WDM- DWDM Mitsubishi Electric Corporation
101 74273 OCTAL POSITIVE EDGE-TRIGGERED D-TYPE FLIP FLOP WITH RESET Mitsubishi Electric Corporation
102 74LS OCTAL BUFFER/LINE DRIVERS WITH 3-STATE OUTPUT(NONINVERTED) Mitsubishi Electric Corporation
103 74LS244 OCTAL BUFFER/LINE DRIVERS WITH 3-STATE OUTPUT(NONINVERTED) Mitsubishi Electric Corporation
104 74LS273 OCTAL POSITIVE EDGE-TRIGGERED D-TYPE FLIP FLOP WITH RESET Mitsubishi Electric Corporation
105 7531 GROUP Single Chip 8-Bit CMOS Microcomputer Mitsubishi Electric Corporation
106 7531 GROUP SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER Mitsubishi Electric Corporation
107 BA01202 GaAs HBT HYBRID IC Mitsubishi Electric Corporation
108 BA01203 GaAs HBT HYBRID IC Mitsubishi Electric Corporation
109 BA01207 GaAs HBT HYBRID IC Mitsubishi Electric Corporation
110 BCR08AM-14 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
111 BCR08AM-14 MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
112 BCR08AS-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
113 BCR08AS-8 MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
114 BCR10CM MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
115 BCR10CM-12 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
116 BCR10CM-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
117 BCR10CS MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
118 BCR10CS Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
119 BCR10PM MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
120 BCR10PM Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation


Datasheets found :: 36747
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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