| No. |
Part Name |
Description |
Manufacturer |
| 91 |
E28F200BX-B80 |
2-MBIT (128K x 16/ 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
| 92 |
E28F200BX-T120 |
2-MBIT (128K x 16/ 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
| 93 |
E28F200BX-T60 |
2-MBIT (128K x 16/ 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
| 94 |
E28F200BX-T80 |
2-MBIT (128K x 16/ 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
| 95 |
E28F400BX-B120 |
4-MBIT (256K X 16/ 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
| 96 |
E28F400BX-B60 |
4-MBIT (256K X 16/ 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
| 97 |
E28F400BX-B80 |
4-MBIT (256K X 16/ 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
| 98 |
E28F400BX-T120 |
4-MBIT (256K X 16/ 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
| 99 |
E28F400BX-T60 |
4-MBIT (256K X 16/ 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
| 100 |
E28F400BX-T80 |
4-MBIT (256K X 16/ 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
| 101 |
FG4000BX-90DA |
MITSUBISHI GATE TURN-OFF THYRISTORS HIGH POWER INVERTER USE PRESS PACK TYPE |
Mitsubishi Electric Corporation |
| 102 |
FG4000BX-90DA |
HIGH POWER INVERTER USE PRESS PACK TYPE |
Powerex Power Semiconductors |
| 103 |
FGC4000BX-90DS |
Gate Commutated Turn-off (GCT) Thyristors/Gate Drive Units |
Mitsubishi Electric Corporation |
| 104 |
FGC4000BX-90DS |
MITSUBISHI GATE TURN-OFF THYRISTORS HIGH POWER INVERTER USE PRESS PACK TYPE |
Mitsubishi Electric Corporation |
| 105 |
FGR4000BX-90DS |
Gate communitated turn-off thyristor for high power inverter use press pack type |
Mitsubishi Electric Corporation |
| 106 |
LP62S1024BX-55LLI |
55ns; operating current:30mA; standby current:5uA; 128K x 8bit low voltage CMOS SRAM |
AMIC Technology |
| 107 |
LP62S1024BX-55LLIF |
55ns; operating current:30mA; standby current:5uA; 128K x 8bit low voltage CMOS SRAM |
AMIC Technology |
| 108 |
LP62S1024BX-55LLT |
128K X 8 BIT LOW VOLTAGE CMOS SRAM |
AMIC Technology |
| 109 |
LP62S1024BX-55LLTF |
128K X 8 BIT LOW VOLTAGE CMOS SRAM |
AMIC Technology |
| 110 |
LP62S1024BX-70LLI |
70ns; operating current:30mA; standby current:5uA; 128K x 8bit low voltage CMOS SRAM |
AMIC Technology |
| 111 |
LP62S1024BX-70LLIF |
70ns; operating current:30mA; standby current:5uA; 128K x 8bit low voltage CMOS SRAM |
AMIC Technology |
| 112 |
LP62S1024BX-70LLT |
128K X 8 BIT LOW VOLTAGE CMOS SRAM |
AMIC Technology |
| 113 |
LP62S1024BX-70LLTF |
128K X 8 BIT LOW VOLTAGE CMOS SRAM |
AMIC Technology |
| 114 |
MAX3246EEBX-T |
±15kV ESD-Protected, Down to 10nA, 3.0V to 5.5V, Up to 1Mbps, True RS-232 Transceivers |
MAXIM - Dallas Semiconductor |
| 115 |
MAX4758EBX-T |
+1.8 to +5.5 V, quad DPDT audio/data switche |
MAXIM - Dallas Semiconductor |
| 116 |
MAX4759EBX-T |
+1.8 to +5.5 V, quad DPDT audio/data switche |
MAXIM - Dallas Semiconductor |
| 117 |
MAX4760EBX-T |
High-Bandwidth / Quad DPDT Switches |
MAXIM - Dallas Semiconductor |
| 118 |
MAX4761EBX-T |
High-Bandwidth / Quad DPDT Switches |
MAXIM - Dallas Semiconductor |
| 119 |
MAX6316LUK25BX-T |
Microprocessor supervisory circuit with watchdog and manual reset (watchdog input,manual reset input,reset output active-low,push/pull).Factory-trimmed reset threshold (typ) 2.500V, min reset timeout 20ms, typ watchdog timeout 102ms |
MAXIM - Dallas Semiconductor |
| 120 |
MAX6316LUK26BX-T |
Microprocessor supervisory circuit with watchdog and manual reset (watchdog input,manual reset input,reset output active-low,push/pull).Factory-trimmed reset threshold (typ) 2.630V, min reset timeout 20ms, typ watchdog timeout 102ms |
MAXIM - Dallas Semiconductor |
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