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Datasheets for C1004

Datasheets found :: 149
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
91 KBPC1004S 10A IN-LINE BRIDGE RECTIFIER Won-Top Electronics
92 KBPC1004W Silicon-Bridge Rectifiers Diotec Elektronische
93 KBPC1004W 10A HIGH CURRENT BRIDGE RECTIFIER Won-Top Electronics
94 KBPC1004W-G Bridge Rectifiers, VRRM=400V, VDC=400V, I(AV)=10A Comchip Technology
95 KM416C1004BJ-45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
96 KM416C1004BJ-5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
97 KM416C1004BJ-6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
98 KM416C1004BJ-7 5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Samsung Electronic
99 KM416C1004BJ-L45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
100 KM416C1004BJ-L5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
101 KM416C1004BJ-L6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
102 KM416C1004BJ-L7 5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Samsung Electronic
103 KM416C1004BT-45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
104 KM416C1004BT-5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
105 KM416C1004BT-6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
106 KM416C1004BT-7 5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Samsung Electronic
107 KM416C1004BT-L45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
108 KM416C1004BT-L5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
109 KM416C1004BT-L6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
110 KM416C1004BT-L7 5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Samsung Electronic
111 KM416C1004C 1M x 16Bit CMOS Dynamic RAM with Extended Data Out Samsung Electronic
112 KM416C1004CJ-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=64ms Samsung Electronic
113 KM416C1004CJ-5 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms Samsung Electronic
114 KM416C1004CJ-6 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms Samsung Electronic
115 KM416C1004CJ-L45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
116 KM416C1004CJ-L5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
117 KM416C1004CJ-L6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
118 KM416C1004CJL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh Samsung Electronic
119 KM416C1004CJL-5 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh Samsung Electronic
120 KM416C1004CJL-6 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh Samsung Electronic


Datasheets found :: 149
Page: | 1 | 2 | 3 | 4 | 5 |



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