No. |
Part Name |
Description |
Manufacturer |
91 |
2SC3642 |
Ultrahigh-Definition Display Horizontal Deflection Output Applications |
SANYO |
92 |
2SC3643 |
Very High-Definition Display Horizontal Deflection Output Applications |
SANYO |
93 |
2SC3644 |
Ultrahigh-Definition Display Horizontal Deflection Output Applications |
SANYO |
94 |
2SC3645 |
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, Predriver Applications |
SANYO |
95 |
2SC3646 |
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications |
SANYO |
96 |
2SC3647 |
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications |
SANYO |
97 |
2SC3648 |
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, Predriver Applications |
SANYO |
98 |
2SC3649 |
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications |
SANYO |
99 |
2SC3650 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
100 |
2SC3651 |
High Gain, Low Frequency, General Purpose NPN Amplifier Transistor |
ON Semiconductor |
101 |
2SC3651 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
102 |
2SC3652 |
SILICON NPN EPITAXIAL HIGH FREQUENCY AMPLIFIER |
Hitachi Semiconductor |
103 |
2SC3657 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS. |
TOSHIBA |
104 |
2SC3658 |
HIGH VOLTAGE,HIGH POWER SWITCHING |
Hitachi Semiconductor |
105 |
2SC3658 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
106 |
2SC3659 |
HIGH VOLTAGE,HIGH POWER SWITCHING |
Hitachi Semiconductor |
107 |
2SC3660 |
Class AB/C UHF 28V push-pull transistor (This datasheet of NEM060C69-28 is also the datasheet of 2SC3660, see the Electrical Characteristics table) |
NEC |
108 |
2SC3660 |
Class AB/C UHF 28V push-pull transistor (This datasheet of NEM060C69-28 is also the datasheet of 2SC3660, see the Electrical Characteristics table) |
NEC |
109 |
2SC3660A |
Class AB/C UHF 28V push-pull transistor (This datasheet of NEM080C69-28 is also the datasheet of 2SC3660A, see the Electrical Characteristics table) |
NEC |
110 |
2SC3660A |
Class AB/C UHF 28V push-pull transistor (This datasheet of NEM080C69-28 is also the datasheet of 2SC3660A, see the Electrical Characteristics table) |
NEC |
111 |
2SC3661 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
112 |
2SC3663 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
113 |
2SC3663-L |
For amplify high frequency and low noise. |
NEC |
114 |
2SC3663-T1B |
For amplify high frequency and low noise. |
NEC |
115 |
2SC3663-T2B |
For amplify high frequency and low noise. |
NEC |
116 |
2SC3664 |
NPN Triple Diffused Planar Type Darlington Silicon Transistor 400V/20A Driver Applications |
SANYO |
117 |
2SC3665 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER AND DRIVE STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
118 |
2SC3666 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
119 |
2SC3668 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
120 |
2SC3668 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
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