No. |
Part Name |
Description |
Manufacturer |
91 |
GM71CS17800CLT-5 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 50ns, low power |
Hynix Semiconductor |
92 |
GM71CS17800CLT-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns, low power |
Hynix Semiconductor |
93 |
GM71CS17800CLT-7 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 70ns, low power |
Hynix Semiconductor |
94 |
GM71CS18163CLT-5 |
1,048,576 words x 16 bit CMOS DRAM, 50ns, low power |
Hynix Semiconductor |
95 |
GM71CS18163CLT-6 |
1,048,576 words x 16 bit CMOS DRAM, 60ns, low power |
Hynix Semiconductor |
96 |
GM71CS18163CLT-7 |
1,048,576 words x 16 bit CMOS DRAM, 70ns, low power |
Hynix Semiconductor |
97 |
GM71V17403CLT-5 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns, low power |
Hynix Semiconductor |
98 |
GM71V17403CLT-6 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns, low power |
Hynix Semiconductor |
99 |
GM71V17403CLT-7 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 70ns, low power |
Hynix Semiconductor |
100 |
GM71VS17403CLT-5 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns, low power |
Hynix Semiconductor |
101 |
GM71VS17403CLT-6 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns, low power |
Hynix Semiconductor |
102 |
GM71VS17403CLT-7 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 70ns, low power |
Hynix Semiconductor |
103 |
GM72V66841CLT |
2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
etc |
104 |
GM72V66841CLT-10K |
2097152 word x 8 bit x 4 bank synchronous dynamic RAM |
LG Semiconductor |
105 |
GM72V66841CLT-7J |
2097152 word x 8 bit x 4 bank synchronous dynamic RAM |
LG Semiconductor |
106 |
GM72V66841CLT-7K |
2097152 word x 8 bit x 4 bank synchronous dynamic RAM |
LG Semiconductor |
107 |
GM72V66841CLT-8 |
2097152 word x 8 bit x 4 bank synchronous dynamic RAM |
LG Semiconductor |
108 |
GM72V66841CT/CLT |
2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
etc |
109 |
GM76C256CLT |
32K x8 bit 5.0V Low Power CMOS slow SRAM |
Hynix Semiconductor |
110 |
GM76U256CLT |
32K x8 bit 3.0V Low Power CMOS slow SRAM |
Hynix Semiconductor |
111 |
GM76V256CLT |
32K x8 bit 3.3V Low Power CMOS slow SRAM |
Hynix Semiconductor |
112 |
HI-15530CLT |
Manchester Encoder / Decoder |
Holt Integrated Circuits |
113 |
HI-3182CLT |
ARINC 429 DIFFERENTIAL LINE DRIVER |
Holt Integrated Circuits |
114 |
HI-3183CLT |
ARINC 429 DIFFERENTIAL LINE DRIVER |
Holt Integrated Circuits |
115 |
HI-8282ACLT |
ARINC 429 SERIAL TRANSMITTER AND DUAL RECEIVER |
Holt Integrated Circuits |
116 |
HM514260CLTT-6 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
117 |
HM514260CLTT-6R |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
118 |
HM514260CLTT-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
119 |
HM514260CLTT-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
120 |
HM514400CLTT-6 |
1,048,576-word x 4-bit dynamic random access memory, 60ns |
Hitachi Semiconductor |
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