No. |
Part Name |
Description |
Manufacturer |
91 |
KDA0476PL-80 |
80MHz; RAM: 256 x 18; 7V; CMOS RAMDAC. For high resolution color graphics, CAD/CAM/CAE applications, image processing, desktop publishing |
Samsung Electronic |
92 |
KDA0478PL-100 |
100MHz; RAM: 256 x 24; 7V; CMOS RAMDAC. For high resolution color graphics, CAD/CAM/CAE applications, image processing, desktop publishing |
Samsung Electronic |
93 |
KDA0478PL-120 |
120MHz; RAM: 256 x 24; 7V; CMOS RAMDAC. For high resolution color graphics, CAD/CAM/CAE applications, image processing, desktop publishing |
Samsung Electronic |
94 |
KDA0478PL-50 |
50MHz; RAM: 256 x 24; 7V; CMOS RAMDAC. For high resolution color graphics, CAD/CAM/CAE applications, image processing, desktop publishing |
Samsung Electronic |
95 |
KDA0478PL-66 |
66MHz; RAM: 256 x 24; 7V; CMOS RAMDAC. For high resolution color graphics, CAD/CAM/CAE applications, image processing, desktop publishing |
Samsung Electronic |
96 |
KDA0478PL-80 |
80MHz; RAM: 256 x 24; 7V; CMOS RAMDAC. For high resolution color graphics, CAD/CAM/CAE applications, image processing, desktop publishing |
Samsung Electronic |
97 |
MAX808LCPA |
Supervisory circuit with +-1.5% reset accuracy. Reset threshold(typ) 4.675V. CMOS RAM write protection.. |
MAXIM - Dallas Semiconductor |
98 |
MAX808LCSA |
Supervisory circuit with +-1.5% reset accuracy. Reset threshold(typ) 4.675V. CMOS RAM write protection.. |
MAXIM - Dallas Semiconductor |
99 |
MAX808LEPA |
Supervisory circuit with +-1.5% reset accuracy. Reset threshold(typ) 4.675V. CMOS RAM write protection.. |
MAXIM - Dallas Semiconductor |
100 |
MAX808LESA |
Supervisory circuit with +-1.5% reset accuracy. Reset threshold(typ) 4.675V. CMOS RAM write protection.. |
MAXIM - Dallas Semiconductor |
101 |
MAX808LMJA |
Supervisory circuit with +-1.5% reset accuracy. Reset threshold(typ) 4.675V. CMOS RAM write protection.. |
MAXIM - Dallas Semiconductor |
102 |
MAX808MCPA |
Supervisory circuit with +-1.5% reset accuracy. Reset threshold(typ) 4.425V. CMOS RAM write protection.. |
MAXIM - Dallas Semiconductor |
103 |
MAX808MCSA |
Supervisory circuit with +-1.5% reset accuracy. Reset threshold(typ) 4.425V. CMOS RAM write protection.. |
MAXIM - Dallas Semiconductor |
104 |
MAX808MEPA |
Supervisory circuit with +-1.5% reset accuracy. Reset threshold(typ) 4.425V. CMOS RAM write protection.. |
MAXIM - Dallas Semiconductor |
105 |
MAX808MESA |
Supervisory circuit with +-1.5% reset accuracy. Reset threshold(typ) 4.425V. CMOS RAM write protection.. |
MAXIM - Dallas Semiconductor |
106 |
MAX808MMJA |
Supervisory circuit with +-1.5% reset accuracy. Reset threshold(typ) 4.425V. CMOS RAM write protection.. |
MAXIM - Dallas Semiconductor |
107 |
MAX808NCPA |
Supervisory circuit with +-1.5% reset accuracy. Reset threshold(typ) 4.575V. CMOS RAM write protection.. |
MAXIM - Dallas Semiconductor |
108 |
MAX808NCSA |
Supervisory circuit with +-1.5% reset accuracy. Reset threshold(typ) 4.575V. CMOS RAM write protection.. |
MAXIM - Dallas Semiconductor |
109 |
MAX808NEPA |
Supervisory circuit with +-1.5% reset accuracy. Reset threshold(typ) 4.575V. CMOS RAM write protection.. |
MAXIM - Dallas Semiconductor |
110 |
MAX808NESA |
Supervisory circuit with +-1.5% reset accuracy. Reset threshold(typ) 4.575V. CMOS RAM write protection.. |
MAXIM - Dallas Semiconductor |
111 |
MAX808NMJA |
Supervisory circuit with +-1.5% reset accuracy. Reset threshold(typ) 4.575V. CMOS RAM write protection.. |
MAXIM - Dallas Semiconductor |
112 |
MSM5188 |
16,384-WORD x 4-BIT SPEED STATIC CMOS RAM |
OKI electronic componets |
113 |
P3C1024 |
3.3 V static CMOS RAM, 128 K x 8 high speed |
Performance Semiconductor Corporation |
114 |
P3C1256-12JC |
12 ns, 3.3 V static CMOS RAM, 32 K x 8 high speed |
Performance Semiconductor Corporation |
115 |
P3C1256-12PC |
12 ns, 3.3 V static CMOS RAM, 32 K x 8 high speed |
Performance Semiconductor Corporation |
116 |
P3C1256-15JC |
15 ns, 3.3 V static CMOS RAM, 32 K x 8 high speed |
Performance Semiconductor Corporation |
117 |
P3C1256-15JI |
15 ns, 3.3 V static CMOS RAM, 32 K x 8 high speed |
Performance Semiconductor Corporation |
118 |
P3C1256-15PC |
15 ns, 3.3 V static CMOS RAM, 32 K x 8 high speed |
Performance Semiconductor Corporation |
119 |
P3C1256-15PI |
15 ns, 3.3 V static CMOS RAM, 32 K x 8 high speed |
Performance Semiconductor Corporation |
120 |
P3C1256-20JC |
20 ns, 3.3 V static CMOS RAM, 32 K x 8 high speed |
Performance Semiconductor Corporation |
| | | |